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BC212BRL1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3
1 Publication Order Number:
BC212B/D
BC212B
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
−50 Vdc
Collector-Base Voltage V
CBO
−60 Vdc
Emitter-Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−100 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
357 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
3
2
1
BC212B = Device Code
A = Assembly
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
BC
212B
AYWW G
G
(Note: Microdot may be in either location)
Device Package Shipping
†
ORDERING INFORMATION
BC212B TO−92 5000 Units / Box
BC212BRL1 TO−92 2000 / Tape & Ree
l
BC212BG TO−92
(Pb−Free)
5000 Units / Box
BC212BRL1G TO−92
(Pb−Free)
2000 / Tape & Ree
l
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BC212B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage V
(BR)CEO
−50 − − Vdc
Collector−Base Breakdown Voltage V
(BR)CBO
−60 − − Vdc
Emitter−Base Breakdown Voltage V
(BR)EBO
−5 − − Vdc
Collector−Emitter Leakage Current I
CBO
− − −15 nAdc
Emitter−Base Leakage Current I
EBO
− − −15 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc) (Note 1)
h
FE
40
60
−
−
−
120
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc) (Note 1)
V
CE(sat)
−
−
−0.10
−0.25
−
−0.6
Vdc
Base−Emitter Saturation Voltage
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
− −1.0 −1.4 Vdc
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
V
BE(on)
−0.6 −0.62 −0.72 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 100 mHz) f
T
− 280 − MHz
Common−Base Output Capacitance
(V
CB
= −10 Vdc, I
C
= 0, f = 1.0 mHz)
C
ob
− − 6.0 pF
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc,
R
S
= 2.0 kW, f = 1.0 kHz, f = 200 Hz)
NF
− − 10
dB
Small−Signal Current Gain
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc, f = 1.0 kHz) h
fe
200 − 400 −
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC212B
http://onsemi.com
3
2.0
1.5
1.0
0.2
0.3
0.5
0.7
−200−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT GAIN
V
CE
= −10 V
T
A
= 25°C
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
−0.1
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain − Bandwidth Product
f
T
, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
−0.4
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
T
A
= 25°C
C
ib
C
ob
r
b
, BASE SPREADING RESISTANCE (OHMS)
150
140
130
120
110
100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
V
CE
= −10 V
T
A
= 25°C
−0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
1.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
′
−0.1 −0.2 −0.3 −0.5 −1.0 −2.0 −3.0 −5.0 −10
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT ADMITTANCE (OHMS)
ob
150
P1-P3P4-P4

BC212BRL1

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 60V PNP
Lifecycle:
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