SiHP16N50C, SiHB16N50C, SiHF16N50C
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Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11
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Document Number: 91401
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
2
PAK)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
V
DS
, Drain-to-Source Voltage (V)
C, Capacitance (pF)
1 10 100 1000
2400
2000
1600
1200
800
400
0
V
GS
= 0 V, f = 1MHz
C
iss
= C
gs
+C
gd
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
iss
C
rss
2800
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
0 20406080
0
4
8
12
16
20
24
I
D
= 16 A
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
0.1
1
10
100
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
GS
= 0 V
T
J
= 25 °C
T
J
= 150 °C
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10 100 1000
1 ms
10 ms
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
100 µs
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10 100 1000
100 µs
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10 ms
1 ms
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
