Characteristics STPS30150C
2/11 Doc ID 7757 Rev 8
1 Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 150 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
δ = 0.5
TO-220FPAB T
c
=120 °C
Per diode
Per device
15
A
TO-220AB
TO-247/D
2
PA K
T
c
= 155 °C 30
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 220 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 10500 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
TO-220FPAB
Per diode
Total
4
3.3
°C/W
TO-220AB/D
2
PA K
Per diode
Total
1.6
0.85
TO-247
Per diode
Total
1.5
0.8
R
th (c)
Coupling
TO-220FPAB 2.6
TO-220AB/D
2
PA K/TO-24 7 0. 1
Ptot
dTj
--------------
1
Rth j a–()
--------------------------
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