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VS-8CVH02-M3/I

P1-P3P4-P6P7-P7
VS-8CVH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-May-17
1
Document Number: 96093
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyper Fast Rectifier, 2 x 4 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Low forward voltage drop reduced Q
rr
and
soft recovery
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Polyimide passivation for high reliability standard
• Ideal for automated placement
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package SlimDPAK (TO-252AE)
I
F(AV)
2 x 4 A
V
R
200 V
V
F
at I
F
0.71 V
t
rr
(typ.) 16 ns
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
2
4
1
3
Anode Anode
1
2
3
SlimDPAK (TO-252AE)
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward
current
per leg
I
F(AV)
T
C
= 167 °C
4
A per device 8
Non-repetitive peak surge current per leg I
FSM
T
J
= 25 °C 100
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage per leg V
F
I
F
= 4 A - 0.88 1.0
I
F
= 8 A - 0.97 1.14
I
F
= 4 A, T
J
= 150 °C - 0.71 0.80
I
F
= 8 A, T
J
= 150 °C - 0.8 1.0
Reverse leakage current per leg I
R
V
R
= V
R
rated - - 4
μA
T
J
= 150 °C, V
R
= V
R
rated - - 80
Junction capacitance per leg C
T
V
R
= 200 V - 17 - pF
VS-8CVH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-May-17
2
Document Number: 96093
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
The heat generated must be less than thermal conductivity from junction to ambient; dP
D
/dT
J
< 1 R
thJA
(2)
Free air, mounted or recommended copper pad area; thermal resistance R
thJA
- junction to ambient
(3)
Mounted on infinite heatsink
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 16 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
RR
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-20-
T
J
= 125 °C - 30 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.5 -
A
T
J
= 125 °C - 4 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 25 -
nC
T
J
= 125 °C - 60 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 - 175 °C
Thermal resistance, junction to ambient
per diode
R
thJA
(1)(2)
-7390°C/W
Thermal resistance, junction to case
per diode
R
thJC
(3)
-2.12.5°C/W
Marking device Case style SlimDPAK (TO-252AE) 8CVH02
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= -40 °C
0.0001
0.001
0.01
0.1
1
10
100
50 100 150 200
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
75 °C
100 °C
25 °C
125 °C
150 °C
175 °C
50 °C
VS-8CVH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-May-17
3
Document Number: 96093
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
10
100
0255075100
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
th
- Thermal Impedance (°C/W)
t
1
- Rectangular Pulse Duration (s)
Junction to ambient
Junction to case
0
20
40
60
80
100
120
140
160
180
200
00.511.522.533.544.5
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
R
thJC
= 2.1 °C/W
See note
(1)
DC
R
thJA
= 73 °C/W
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0123456
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
P1-P3P4-P6P7-P7

VS-8CVH02-M3/I

Mfr. #:
Buy VS-8CVH02-M3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 8A SlimDPAK Fred
Lifecycle:
New from this manufacturer.
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