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NDF03N60ZH

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
1 Publication Order Number:
NDF03N60Z/D
NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V, 3.6 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage V
DSS
600 V
Continuous Drain Current R
q
JC
I
D
3.1
(Note 1)
2.6 A
Continuous Drain Current R
q
JC
T
A
= 100°C
I
D
2.9
(Note 1)
1.65 A
Pulsed Drain Current, V
GS
@ 10 V I
DM
12 10 A
Power Dissipation R
q
JC
P
D
27 61 W
Gate−to−Source Voltage V
GS
±30 V
Single Pulse Avalanche Energy,
I
D
= 3.0 A
E
AS
100 mJ
ESD (HBM) (JESD 22−A114) V
esd
3000 V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T
A
= 25°C) (Figure 17)
V
ISO
4500 V
Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns
Continuous Source Current (Body
Diode)
I
S
3.0 A
Maximum Temperature for Soldering
Leads
T
L
260 °C
Operating Junction and
Storage Temperature Range
T
J
, T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I
SD
= 3.0 A, di/dt ≤ 100 A/ms, V
DD
≤ BV
DSS
, T
J
= +150°C
www.onsemi.com
See detailed ordering and shipping information on page 7 of
this data sheet.
MARKING AND ORDERING INFORMATION
V
DSS
R
DS(on)
(MAX) @ 1.2 A
600 V
3.6 W
NDD03N60ZT4G
DPAK
CASE 369AA
1
2
3
4
NDD03N60Z−1G
IPAK
CASE 369D
1
2
3
4
N−Channel
G (1)
D (2)
S (3)
NDF03N60ZG,
NDF03N60ZH
TO−220FP
CASE 221AH
1
2
3
NDF03N60Z, NDD03N60Z
www.onsemi.com
2
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junction−to−Case (Drain) NDF03N60Z
NDD03N60Z
R
q
JC
4.7
2.0
°C/W
Junction−to−Ambient Steady State (Note 3) NDF03N60Z
(Note 4) NDD03N60Z
(Note 3) NDD03N60Z−1
R
q
JA
51
40
80
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Test Conditions Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA BV
DSS
600 V
Breakdown Voltage Temperature Co-
efficient
Reference to 25°C,
I
D
= 1 mA
DBV
DSS
/
DT
J
0.6 V/°C
Drain−to−Source Leakage Current
V
DS
= 600 V, V
GS
= 0 V
25°C
I
DSS
1 mA
150°C 50
Gate−to−Source Forward Leakage V
GS
= ±20 V I
GSS
±10
mA
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
V
GS
= 10 V, I
D
= 1.2 A R
DS(on)
3.3 3.6
W
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50 mA
V
GS(th)
3.0 3.9 4.5 V
Forward Transconductance V
DS
= 15 V, I
D
= 1.5 A g
FS
2.0 S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
C
iss
248 312 372
pF
Output Capacitance (Note 6) C
oss
30 39 50
Reverse Transfer Capacitance
(Note 6)
C
rss
4 8 12
Total Gate Charge (Note 6)
V
DD
= 300 V, I
D
= 3.0 A,
V
GS
= 10 V
Q
g
6 12 18
nC
Gate−to−Source Charge (Note 6) Q
gs
1.5 2.5 4
Gate−to−Drain (“Miller”) Charge
(Note 6)
Q
gd
3 6.1 9
Plateau Voltage V
GP
6.4 V
Gate Resistance R
g
6.0
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
V
DD
= 300 V, I
D
= 3.0 A,
V
GS
= 10 V, R
G
= 5 W
t
d(on)
9
ns
Rise Time t
r
8
Turn−Off Delay Time t
d(off)
16
Fall Time t
f
10
SOURCE−DRAIN DIODE CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
I
S
= 3.0 A, V
GS
= 0 V V
SD
1.6 V
Reverse Recovery Time
V
GS
= 0 V, V
DD
= 30 V
I
S
= 3.0 A, di/dt = 100 A/ms
t
rr
265 ns
Reverse Recovery Charge Q
rr
0.9
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
NDF03N60Z, NDD03N60Z
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 5.0 10.0 15.0 20.0 25.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
7.0 V
V
GS
= 10 V
6.5 V
6.0 V
5.5 V
5.0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
34567891
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
DS
= 25 V
T
J
= 150°C
T
J
= −55°C
T
J
= 25°C
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Region versus Gate−to−Source
Voltage
I
D
= 1.2 A
T
J
= 25°C
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
GS
= 10 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
−50 −25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 1.2 A
V
GS
= 10 V
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0.90
0.95
1.00
1.05
1.10
1.15
−50 −25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. BV
DSS
Variation with Temperature
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE (V)
I
D
= 1 mA
P1-P3P4-P6P7-P9P10-P10

NDF03N60ZH

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors MOSFET NFET 600V 3A 3.3
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