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IRLS3036TRL7PP

P1-P3P4-P6P7-P9
10/28/10
www.irf.com 1
HEXFET
®
Power MOSFET
S
D
G
GDS
Gate Drain Source
IRLS3036-7PPbF
PD -97148A
D
2
Pak 7 Pin
G
S
S
D
S
S
S
V
DSS
60V
R
DS(on)
typ.
1.5m
:
max.
1.9m
:
I
D (Silicon Limited)
300A
c
I
D (Package Limited)
240A
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R
DS(ON)
at 4.5V V
GS
l Superior R*Q at 4.5V V
GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
kl –––
0.40 °C/W
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state)
j ––– 40
300
Max.
300
c
210
1000
240
See Fig. 14, 15, 22a, 22b
A
°C
300
380
8.1
± 16
2.5
-55 to + 175
IRLS3036-7PPbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
s
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.059 ––– V/°C
––– 1.5 1.9
––– 1.7 2.2
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G(int)
Internal Gate Resistance
–––
1.9 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
s
gfs Forward Transconductance 390 ––– ––– S
Q
g
Total Gate Charge ––– 110 160
Q
gs
Gate-to-Source Charge ––– 33 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 53 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
––– 57 –––
t
d(on)
Turn-On Delay Time ––– 81 –––
t
r
Rise Time ––– 540 –––
t
d(off)
Turn-Off Delay Time ––– 89 –––
t
f
Fall Time ––– 170 –––
C
iss
Input Capacitance ––– 11270 –––
C
oss
Output Capacitance ––– 1025 –––
C
rss
Reverse Transfer Capacitance ––– 520 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
i
––– 1460 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
h
––– 1630 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
s
I
S
Continuous Source Current ––– –––
(Body Diode)
I
SM
Pulsed Source Current ––– –––
(Body Diode)
e
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 57 –––
T
J
= 25°C V
R
= 51V,
––– 60 –––
T
J
= 125°C I
F
= 180A
Q
rr
Reverse Recovery Charge ––– 140 –––
T
J
= 25°C
di/dt = 100A/μs
g
––– 160 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 4.6 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= -16V
showing the
V
DS
= 30V
Conditions
V
GS
= 4.5V
g
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
i
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
d
V
GS
= 10V, I
D
= 180A
g
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
ns
V
GS
= 0V, V
DS
= 0V to 48V
h
MOSFET symbol
T
J
= 25°C, I
S
= 180A, V
GS
= 0V
g
integral reverse
p-n junction diode.
V
GS
= 16V
nC
μA
nA
nC
ns
R
DS(on)
Static Drain-to-Source On-Resistance
pF
A
300
1000
V
GS
= 4.5V, I
D
= 150A
g
mΩ
I
D
= 180A
R
G
= 2.1Ω
V
GS
= 4.5V
g
V
DD
= 39V
I
D
= 180A, V
DS
=0V, V
GS
= 4.5V
Conditions
V
DS
= 10V, I
D
= 180A
I
D
= 180A
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
Notes:
Calculated continuous current based on maximum allowable junction
temperature Bond wire current limit is 240A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.018mH
R
G
= 25Ω, I
AS
= 180A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤ 180A, di/dt ≤ 1070A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
IRLS3036-7PPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60μs PULSE WIDTH
Tj = 25°C
2.7V
VGS
TOP 15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60μs PULSE WIDTH
Tj = 175°C
2.7V
VGS
TOP 15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.0 3.0 4.0 5.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤
60μs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 180A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
5000
10000
15000
20000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 100 kHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20 40 60 80 100 120 140
Q
G
Total Gate Charge (nC)
0
1
2
3
4
5
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
I
D
= 180A
P1-P3P4-P6P7-P9

IRLS3036TRL7PP

Mfr. #:
Buy IRLS3036TRL7PP
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7
Lifecycle:
New from this manufacturer.
Delivery:
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