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2 - 5
20120410c
MKI 80-06T6K
IXYS reserves the right to change limits, test conditions and dimensions.
IGBTs
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 600 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
89
67
A
A
P
tot
total power dissipation
T
C
= 25°C 210 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 75 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
1.8
2.1
2.3 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 1.2 mA; V
GE
= V
CE
T
VJ
= 25°C 5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 1
0.5 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 400 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 4620 pF
Q
G(on)
total gate charge
V
CE
= 480 V; V
GE
= 15 V; I
C
= 75 A 470 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 300 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 5.1 W
30
20
250
70
2.5
2.8
ns
ns
ns
ns
mJ
mJ
I
CM
V
CEK
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 5.1 W; L = 100 µH
clamped inductive load
; T
VJ
= 125°C
150
0.9x V
CES
A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 480 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 5.1 W; non-repetitive
6 µs
R
thJC
thermal resistance junction to case
(per IGBT) 0.6 K/W
R
thCH
thermal resistance case to heatsink
(per IGBT) 0.2 K/W
Diodes
Symbol
Definitions Conditions
Maximum Ratings
V
RRM
max. repetitive reverse voltage
600 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
105
67
A
A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
forward voltage
I
F
= 75 A T
VJ
= 25°C
T
VJ
= 125°C
1.8
1.6
2.2 V
V
I
RM
t
rr
max. reverse recovery current
reverse recovery time
V
R
= 300 V; I
F
= 75 A
di
F
/dt = -600 A/µs T
VJ
= 100°C
36
100
A
ns
R
thJC
thermal resistance junction to case
(per diode) T
VJ
= 25°C 0.65 K/W
R
thCH
thermal resistance case to heatsink
(per diode) 0.25 K/W
