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DB2J40600L

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB2J40600L
Absolute Maximum Ratings Ta = 25 C
Peak forward current
*1
50Hz sine wave 1 cycle ( Non-repetitive peak current )
Page
°C-55 to +125
Internal Connection
UnitParameter Symbol Rating
Reverse voltage VR
40 V
1of4
Unit: mm
2. Anode
Short reverse recovery time trr
Small reverse current IR
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol
:
DB2J40600L
Silicon epitaxial planar type
For high speed switching circuits
Features
Code
1. Cathode
―
Panasonic SMini2-F5-B
JEITA SC-90A
4Q
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
°C
+85 °C
Repetitive peak reverse voltage
Average forward current
VRRM
IF (AV)
Junction temperature Tj 125
A
IFM
300
V
mA
mA
40
100
Note:
Non-repetitive peak forward surge current
*1
IFSM
1
Storage temperature Tstg
-40 toToprOperating ambient temperature
1
2
2.5
1.25
0.7
1.7
0.13
0.35
0.5
2
1
Doc No.
TT4-EA-13098
Revision.
2
Established
:
2011-04-22
:
2013-12-12
Product Standards
Schottky Barrier Diode
DB2J40600L
Electrical Characteristics Ta = 25 C 3 C
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. Absolute frequency of lnput and output is 250 MHz
4. *1 : trr measurement circuit
Page
A
trr
2.2
Ct
ns IF = IR = 100 mA, Irr = 10 mA 0.9
Min Typ
2
pF
V
0.6
UnitMax
of 4
5
Parameter Symbol Conditions
IR VR = 40 V
VF IF = 100 mA
Note:
　Forward voltage
　Reverse current
　Terminal capacitance
　Reverse recovery time
*1
VR = 10 V, f = 1 MHz
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Doc No.
TT4-EA-13098
Revision.
2
Established
:
2011-04-22
:
2013-12-12
Product Standards
Schottky Barrier Diode
DB2J40600L
Technical Data ( reference )
Page 3 of 4
IR - VR
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Reverse current IR (A)
-40 ℃
25 ℃
85 ℃
Ta = 125 ℃
IF - VF
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward voltage VF (V)
Forward current IF (A)
-40 ℃
25 ℃
85 ℃
Ta = 125 ℃
Ct - VR
0
2
4
6
8
10
12
14
16
0 10203040
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 ℃
f = 1 MHz
Doc No.
TT4-EA-13098
Revision.
2
Established
:
2011-04-22
:
2013-12-12
P1-P3P4-P5

DB2J40600L

Mfr. #:
Buy DB2J40600L
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers Schottky Diode SC-90A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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