OP281/OP481
Rev. D | Page 4 of 20
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
1
V
OS
0.1 1.5 mV
−40°C T
A
≤ +85°C 2.5 mV
Input Bias Current I
B
−40°C ≤ T
A
≤ +85°C 3 10 nA
Input Offset Current I
OS
−40°C ≤ T
A
≤ +85°C 0.1 7 nA
Input Voltage Range 0 4 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 4.0 V, −40°C ≤ T
A
≤ +85°C 65 90 dB
Large-Signal Voltage Gain A
VO
R
L
= 1 MΩ, V
O
= 0.5 V to 4.5 V 5 15 V/mV
−40°C T
A
≤ +85°C 2 V/mV
Offset Voltage Drift ΔV
OS
/ΔT −40°C to +85°C 10 μV/°C
Bias Current Drift ΔI
B
/ΔT 20 pA/°C
Offset Current Drift ΔI
OS
/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to GND, −40°C ≤ T
A
+8C 4.925 4.96 V
Output Voltage Low V
OL
R
L
= 100 kΩ to V+, −40°C ≤ T
A
≤ +85°C 25 75 mV
Short-Circuit Limit I
SC
±3.5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.7 V to 12 V, −40°C ≤ T
A
≤ +85°C 76 95 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 3.2 4 μA
−40°C T
A
≤ +85°C 5 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 100 kΩ, C
L
= 50 pF 27 V/ms
Saturation Recovery Time 120 μs
Gain Bandwidth Product GBP 100 kHz
Phase Margin φ
M
74 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density e
n
f = 1 kHz 75 nV/√Hz
Current Noise Density i
n
<1 pA/√Hz
1
V
OS
is tested under a no load condition.
OP281/OP481
Rev. D | Page 5 of 20
V
S
= ±5.0 V, T
A
= +25°C, unless otherwise noted.
Table 3.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
1
V
OS
0.1 1.5 mV
–40°C T
A
≤ +85°C 2.5 mV
Input Bias Current I
B
–40°C ≤ T
A
≤ +85°C 3 10 nA
Input Offset Current I
OS
–40°C ≤ T
A
≤ +85°C 0.1 7 nA
Input Voltage Range –5 +4 V
Common-Mode Rejection CMRR V
CM
= –5.0 V to +4.0 V, –40°C ≤ T
A
≤ +85°C 65 95 dB
Large-Signal Voltage Gain A
VO
R
L
= 1 MΩ, V
O
= ±4.0 V, 5 13 V/mV
–40°C T
A
≤ +85°C 2 V/mV
Offset Voltage Drift ΔV
OS
/ΔT –40°C to +85°C 10 μV/°C
Bias Current Drift ΔI
B
/ΔT 20 pA/°C
Offset Current Drift ΔI
OS
/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing V
O
R
L
= 100 kΩ to GND, –40°C ≤ T
A
≤ +85°C ±4.925 ±4.98 V
Short-Circuit Limit I
SC
12 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±1.35 V to ±6 V, –40°C ≤ T
A
≤ +85°C 76 95 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 3.3 5 μA
–40°C T
A
≤ +85°C 6 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 100 kΩ, C
L
= 50 pF 28 V/ms
Gain Bandwidth Product GBP 105 kHz
Phase Margin φ
M
75 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density e
n
f = 1 kHz 85 nV/√Hz
f = 10 kHz 75 nV/√Hz
Current Noise Density i
n
<1 pA/√Hz
1
V
OS
is tested under a no load condition.
OP281/OP481
Rev. D | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 16 V
Input Voltage GND to V
S
+ 10 V
Differential Input Voltage ±3.5 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Table 5. Thermal Resistance
Package Type θ
JA
1
θ
JC
Unit
8-Lead SOIC (R Suffix) 158 43 °C/W
8-Lead TSSOP (RU Suffix) 240 43 °C/W
14-Lead SOIC (R Suffix) 120 36 °C/W
14-Lead TSSOP (RU Suffix) 240 43 °C/W
1
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is specified for device
soldered in circuit board for TSSOP and SOIC packages.
ESD CAUTION

OP281GSZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps 5V DUAL RRO 4uA IC 2.7-12V
Lifecycle:
New from this manufacturer.
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