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2N4391

P1-P3P4-P6P7-P7
2N/PN/SST4391 Series
Vishay Siliconix
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-1
N-Channel JFETs
2N4391 PN4391 SST4391
2N4392 PN4392 SST4392
2N4393 PN4393 SST4393
PRODUCT SUMMARY
Part Number V
GS(off)
(V)
r
DS(on)
Max ()
I
D(off)
Typ (pA) t
ON
Typ (ns)
2N/PN/SST4391
–4 to –10
30 5 4
2N/PN/SST4392 –2 to –5 60 5 4
2N/PN/SST4393 –0.5 to –3 100 5 4
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 4391<30
D Fast Switching—t
ON
: 4 ns
D High Off-Isolation: I
D(off)
with Low
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Commutators
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.
The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
2N4391
2N4392
2N4393
1
23
TO-226AA
(TO-92)
Top View
PN4391
PN4392
PN4393
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236
For applications information see AN104 and AN106
.
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) –40 V. . . . . . . . . . . . . . . . . . .
(SST Prefix) –35 V. . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300 _C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) –65 to 200 _C. . . . . . . . . . . . . . . . . .
(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix) –55 to 200 _C. . . . . . . . . . . . . . . . . .
(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .
Power Dissipation : (2N Prefix)
a
(T
C
= 25_C) 1800 mW. . . . . . . . . .
(PN/SST Prefixes)
b
350 mW. . . . . . . . . . . . . . .
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–55 –40 –40 –40
Gate-Source
V
DS
= 20 V 2N/PN: I
D
= 1 nA
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 15 V SST: I
D
= 10 nA
–4 –10 –2 –5 –0.5 –3
2N 50 150 25 75 5 30
Saturation Drain
Current
b
I
DSS
V
DS
= 20 V, V
GS
= 0 V
PN 50 150 25 100 5 60
mA
Current
b
DSS DS GS
SST 50 25 5
V
GS
= –20 V
2N/SST –5 –100 –100 –100
V
GS
= –20 V
V
DS
= 0 V
PN –5 –1000 –1000 –1000
pA
Gate Reverse Current I
GSS
2N: T
A
= 150_C
–13 –200 –200 –200
GSS
PN: T
A
= 100_C
–1 –200 –200 –200
nA
SST: T
A
= 125_C
–3
Gate Operating Current I
G
V
DG
= 15 V, I
D
= 10 mA –5
2N: V
GS
= –5 V 5 100
2N: V
GS
= –7 V 5 100
pA
2N: V
GS
= –12 V 5 100
V
DS
= 20 V
PN: V
GS
= –5 V 0.005 1
PN: V
GS
= –7 V 0.005 1
nA
PN: V
GS
= –12 V 0.005 1
SST V
DS
= 10 V, V
GS
= –10 V 5 100 100 100 pA
Drain Cutoff Current I
D(off) 2N: V
GS
= –5 V 13 200
V
DS
= 20 V
T = 150_C
2N: V
GS
= –7 V 13 200
T
A
= 150
_
C
2N: V
GS
= –12 V 13 200
PN: V
GS
= –5 V 1 200
nA
V
DS
= 20 V
T = 100_C
PN: V
GS
= –7 V 1 200
nA
T
A
= 100
_
C
PN: V
GS
= –12 V 1 200
V
DS
= 10 V
T
A
= 125_C
SST: V
GS
= –10 V 3
I
D
= 3 mA 0.25 0.4
Drain-Source
On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 6 mA 0.3 0.4
V
On-Voltage
DS(on) GS
I
D
= 12 mA 0.35 0.4
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 30 60 100
Gate-Source I
G
= 1 mA
2N 0.7 1 1 1
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA
V
DS
= 0 V
PN/SST 0.7
V
2N/PN/SST4391 Series
Vishay Siliconix
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-3
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance
g
fs
6 mS
Common-Source
Output Conductance
g
os
V
DS
= 20 V, I
D
= 1 mA, f = 1 kHz
25
S
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz 30 60 100
2N 12 14 14 14
Common-Source
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
PN 12 16 16 16
Input Capacitance
iss
f = 1 MHz
SST 13
2N: V
GS
= –5 V 3.3 3.5
2N: V
GS
= –7 V 3.2 3.5
2N: V
GS
= –12 V 2.8 3.5
PN: V
GS
= –5 V 3.5 5
pF
Common-Source
Reverse Transfer
C
rss
V
DS
= 0 V
f = 1 MHz
PN: V
GS
= –7 V 3.4 5
Capacitance
rss
f = 1 MHz
PN: V
GS
= –12 V 3.0 5
SST: V
GS
= –5 V 3.6
SST: V
GS
= –7 V 3.5
SST: V
GS
= –12 V 3.1
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
3
nV⁄
√Hz
Switching
2N/PN 2 15 15 15
t
d(on)
SST 2
Turn-On Time
2N/PN 2 5 5 5
t
r
V
DD
= 10 V
SST 2
V
GS(H)
= 0 V
See Switching Circuit
2N/PN 6 20 35 50
ns
t
d(off)
See Switching Circuit
SST 6
Turn-Off Time
2N/PN 13 15 20 30
t
f
SST 13
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v300 s duty cycle v3%.
P1-P3P4-P6P7-P7

2N4391

Mfr. #:
Buy 2N4391
Manufacturer:
Central Semiconductor
Description:
JFET N-Chan JFET
Lifecycle:
New from this manufacturer.
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