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TCLT1017

P1-P3P4-P6P7-P9
TCLT101. Series
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 19-Jan-16
1
Document Number: 81256
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, LSOP-4,
110 °C Rated, Long Mini-Flat Package
DESCRIPTION
The TCLT101. series consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4-lead LSOP package.
APPLICATIONS
• Switchmode power supplies
• Computer peripheral interface
• Microprocessor system interface
FEATURES
• SMD low profile 4 lead package
• High isolation 5000 V
RMS
• CTR flexibility available see order information
• Extra low coupling capacitance
• Connected base
• DC input with transistor output
• Temperature range -55 °C to +110 °C
• Creepage distance > 8 mm
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E76222
• cUL - file no. E76222, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5
• FIMKO: EN 60950
CE
AC
12
43
17295-5
ORDERING INFORMATION
TCLT101#
PART NUMBER
AGENCY
CERTIFIED/PACKAGE
CTR (%)
5 mA 10 mA 5 mA
UL, cUL, VDE, FIMKO 50 to 600 63 to 125 100 to 200 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
LSOP-4 TCLT1010 TCLT1012 TCLT1013 TCLT1015 TCLT1016 TCLT1017 TCLT1018 TCLT1019
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
1.5 A
Power dissipation P
diss
100 mW
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
150 mW
Junction temperature T
j
125 °C
LSOP-4
10.2 mm
TCLT101. Series
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 19-Jan-16
2
Document Number: 81256
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Wave soldering three cycles are allowed. Also refer to “Assembly Instruction” (www.vishay.com/doc?80054).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Total power dissipation P
tot
250 mW
Operating ambient temperature range T
amb
-55 to +110 °C
Storage temperature range T
stg
-55 to +125 °C
Soldering temperature
(1)
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
- 1.25 1.6 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
70 - - V
Emitter collector voltage I
E
= 100 μA V
ECO
7--V
Collector emitter leakage current V
CE
= 20 V, I
F
= 0 A I
CEO
- 10 100 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
--0.3V
Cut-off frequency V
CE
= 5 V, I
F
= 10 mA, R
L
= 100 Ω f
c
- 110 - kHz
Coupling capacitance f = 1 MHz C
k
-0.3- pF
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
50
100
150
200
250
300
0 20 40 60 80 100 120
P
tot
- Total Power Di
ss
ipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
TCLT101. Series
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 19-Jan-16
3
Document Number: 81256
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 2 - Derating Diagram Fig. 3 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA TCLT1010 CTR 50 - 600 %
V
CE
= 5 V, I
F
= 10 mA
TCLT1012 CTR 63 - 125 %
TCLT1013 CTR 100 - 200 %
V
CE
= 5 V, I
F
= 1 mA
TCLT1012 CTR 22 45 - %
TCLT1013 CTR 34 70 - %
V
CE
= 5 V, I
F
= 5 mA
TCLT1015 CTR 50 - 150 %
TCLT1016 CTR 100 - 300 %
TCLT1017 CTR 80 - 160 %
TCLT1018 CTR 130 - 260 %
TCLT1019 CTR 200 - 400 %
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Partial discharge test voltage - routine test 100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
8kV
V
pd
1.3 kV
Isolation test voltage (RMS) V
ISO
5000 V
RMS
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
Forward current I
si
130 mA
Power dissipation P
so
265 mW
Rated impulse voltage V
IOTM
8kV
Safety temperature T
si
150 °C
Clearance distance 8.0 mm
Creepage distance 8.0 mm
Insulation distance (internal) 0.40 mm
0 25 50 75 125
0
50
100
150
200
300
T
si
- Safety Temperature (°C)
150
94 9182-2
100
250
IR-diode
I
si
(mA)
Phototransistor
P
so
(mW)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P9

TCLT1017

Mfr. #:
Buy TCLT1017
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor 80-160% CTR 5mA
Lifecycle:
New from this manufacturer.
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