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ILQ621GB

P1-P3P4-P6P7-P9P10-P10
Document Number: 83654 For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.5, 20-Dec-07 1
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
DESCRIPTION
The ILD621/ILQ621 and ILD621GB/ILQ621GB are
multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN silicon phototransistors.
These devices are constructed using double molded
insulation technology. This assembly process offers a
withstand test voltage of 7500 VDC.
The ILD621/ILQ621GB is well suited for CMOS interfacing
given the CTR
CEsat
of 30 % minimum at I
F
of 1.0 mA. High
gain linear operation is guaranteed by a minimum CTR
CE
of
100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR
CE
50 % minimum at 5.0 mA. The transparent ion shield insures
stable DC gain in applications such as power supply
feedback circuits, where constant DC V
IO
voltages are
present.
FEATURES
• Alternate source to TLP621-2/-4 and
TLP621GB-2/-4
• High collector emitter voltage, BV
CEO
= 70 V
• Dual and quad packages feature:
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage, 5300 V
RMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• BSI IEC 60950; IEC 60065
•FIMKO
i179054
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Dual Channel
Quad Channel
ORDER INFORMATION
PART REMARKS
ILD621 CTR > 50 %, dual, DIP-8
ILD621GB CTR > 100 %, dual, DIP-8
ILQ621 CTR > 50 %, quad, DIP-16
ILQ621GB CTR > 100 %, quad, DIP-16
ILD621-X006 CTR > 50 %, dual, DIP-8 400 mil
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83654
2 Rev. 1.5, 20-Dec-07
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Note
For additional information on the available options refer to option information.
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ILD621-X007 CTR > 50 %, dual, SMD-8 (option 7)
ILD621-X009 CTR > 50 %, dual, SMD-8 (option 9)
ILD621GB-X007 CTR > 100 %, dual, SMD-8 (option 7)
ILQ621-X006 CTR > 50 %, quad, DIP-16 400 mil
ILQ621-X007 CTR > 50 %, quad, SMD-16 (option 7)
ILQ621-X009 CTR > 50 %, quad, SMD-16 (option 9)
ILQ621GB-X006 CTR > 100 %, quad, DIP-16 400 mil
ILQ621GB-X007 CTR > 100 %, quad, SMD-16 (option 7)
ILQ621GB-X009 CTR > 100 %, quad, SMD-16 (option 9)
ORDER INFORMATION
PART REMARKS
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
1.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter reverse voltage V
ECO
70 V
Collector current
I
C
50 mA
t < 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Derate from 25 °C - 2.0 mW/°C
COUPLER
Isolation test voltage t = 1.0 s V
ISO
5300 V
RMS
Package dissipation
ILD621 400 mW
ILD621GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation
ILQ621 500 mW
ILQ621GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(2)
2.0 mm from case bottom T
sld
260 °C
Document Number: 83654 For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.5, 20-Dec-07 3
ILD621/ILD621GB/ILQ621/ILQ621GB
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Vishay Semiconductors
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.01.151.3 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
40 pF
Thermal resistance, junction to lead R
THJL
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector emitter leakage current V
CE
= 24 V
I
CEO
10 100 nA
I
CEO
20 50 µA
Thermal resistance, junction to lead R
THJL
500 K/W
COUPLER
Capacitance (input to output) V
IO
= 0 V, f = 1.0 MHz C
IO
0.8 pF
Insulation resistance V
IO
= 500 V 10
12
Ω
Channel to channel insulation 500 VAC
Collector emitter saturation voltage
I
F
= 8.0 mA, I
CE
= 2.4 mA
ILD621
V
CEsat
0.4 V
ILQ621
I
F
= 1.0 mA, I
CE
= 0.2 mA
ILD621GB
V
CEsat
0.4 V
ILQ621GB
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Channel/channel
CTR match
I
F
= 5.0 mA, V
CE
= 5.0 V
CTRX/
CTRY
1 to 1 3 to 1 %
Current transfer ratio
(collector emitter
saturated)
I
F
= 1.0 mA, V
CE
= 0.4 V
ILD621 CTR
CEsat
60 %
ILQ621 CTR
CEsat
60 %
ILD621GB CTR
CEsat
30 %
ILQ621GB CTR
CEsat
30 %
Current transfer ratio
(collector emitter)
I
F
= 5.0 mA, V
CE
= 5.0 V
ILD621 CTR
CE
50 80 600 %
ILQ621 CTR
CE
50 80 600 %
ILD621GB CTR
CE
100 200 600 %
ILQ621GB CTR
CE
100 200 600 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
On time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
on
3.0 µs
Rise time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
r
2.0 µs
Off time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
off
2.3 µs
Fall time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
f
2.0 µs
Propagation H to L I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
PHL
1.1 µs
Propagation L to H I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
PLH
2.5 µs
P1-P3P4-P6P7-P9P10-P10

ILQ621GB

Mfr. #:
Buy ILQ621GB
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Quad CTR >100%
Lifecycle:
New from this manufacturer.
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