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NLAS3257CMX2TCG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 1
1 Publication Order Number:
NLAS3257/D
NLAS3257
Mux / Demux Analog Switch
The NLAS3257 Mux / Demux Analog Switch is an advanced
high−speed single pole double throw (SPDT) analog switch in
ultra−small footprint.
Features
• High Speed: t
PD
= 0.25 ns (Max) @ V
CC
= 4.5 V
• R
ON
: 7.5 , Typ @ V
CC
= 4.2 V
• C
ON
: 7.5 pF, Typ @ V
CC
= 3.3 V
• V
CC
Range: 1.65 V to 4.5 V
• Ultra−Small 1 x 1 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Mobile Phones, PDAs, Camera
Figure 1. XLLGA6
(Top View)
B1
B0
GND
S
A
V
CC
1
2
3
6
5
4
Figure 2. Logic Diagram
B1
S
B0A
Function Table
Input S Function
L A = B0
H A = B1
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
www.onsemi.com
XLLGA6
1.0 x 1.0
CASE 713AD
L = Specific Device Code
M = Date Code
LM
NLAS3257
www.onsemi.com
2
Table 1. MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +5.5 V
V
IN
Control Input Voltage (S Pin) −0.5 to +5.5 V
V
I/O
Switch Input / Output Voltage (A, B0, B1 Pins) −0.5 to +5.5 V
I
IK
Control Pin DC Input Diode Current (S Pin) V
IN
< GND −50 mA
I
OK
Switch I/O Port DC Diode Current (A, B0, B1 Pins) V
I/O
< GND or V
I/O
> V
CC
±50 mA
I
O
On−State Switch Current ±128 mA
Continuous Current Through V
CC
or GND ±150 mA
I
CC
DC Supply Current per Supply Pin ±150 mA
I
GND
DC Ground Current per Ground Pin ±150 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
JA
Thermal Resistance (Note 1) XLLGA6 466 °C/W
P
D
Power Dissipation in Still Air at 85°C (Note 1) XLLGA6 269 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Mode (Note 2)
Machine Mode (Note 3)
Charged Device Mode (Note 4)
>6000
>200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 85°C (Note 5) ±100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/ JESD22−A114−A
3. Tested to EIA/ JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA / JESD78.
Table 2. RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 4.5 V
V
I
Control Pin Input Voltage (S Pin) 0 4.5 V
V
I/O
Switch Input / Output Voltage (A, B0, B1 Pins) 0 V
CC
V
T
A
Operating Free−Air Temperature −40 +85 °C
t / V
Input Transition Rise or Fall Rate Control Input
Switch I/O
0
0
20
DC
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLAS3257
www.onsemi.com
3
Table 3. DC ELECTRICAL CHARACTERISTICS (Typical: T = 25°C, V
CC
= 3.3 V)
Symbol
Parameter Test Conditions V
CC
(V)
T
A
= −405C to +855C
Unit
Min Typ Max
V
IH
Control Input, High Voltage
(S Pin)
2.7
3.3
4.2
0.8
1.0
1.25
V
V
IL
Control Input, Low Voltage
(S Pin)
2.7
3.3
4.2
0.3
0.4
0.5
V
I
IN
Control Input, Leakage
Current (S Pin)
0 ≤ V
IN
≤ V
CC
1.65 − 4.5 ±0.5 ±1.0
A
I
B0/B1_OFF
Off State Leakage Current
(B0/B1 Pins)
V
IN
= V
IL
or V
IH
V
B0
and V
B1
= 0.3 V
V
A
= 4 V
4.5 ±20 ±100 nA
I
A_ON
On State Leakage Current
(A Pin)
V
IN
= V
IL
or V
IH
V
B0
= 0.3 V or 4 V with
V
B1
= Floating
or
V
B1
= 0.3 V or 4 V with
V
B0
= Floating
V
A
= 0.3 V or 4.0 V
4.5 ±20 ±100 nA
I
Power_OFF
Power Off Leakage
Current (S Pin)
V
IN
= 0 or 4.5 V 0 ±100 nA
I
CC
Quiescent Supply Current
(V
CC
Pin)
V
IN
= V
CC
or GND,
V
IS
= V
CC
or GND,
I
Load
= 0 A
1.65 − 4.5 0.1 1.0
A
I
CC
Additional Quiescent
Supply Current (V
CC
Pin)
V
IN
= V
CC
or GND,
V
IS
= V
CC
or GND,
I
Load
= 0 A
3.3
4.2
2.0
3.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. ON RESISTANCE (Typical: T = 25°C)
Symbol
Parameter Test Conditions V
CC
(V)
T
A
= −405C to +855C
Unit
Min Typ Max
R
ON
ON−Resistance I
ON
= 8 mA,
V
IS
= 0 V to V
CC
2.7
3.3
4.2
9.3
8.7
7.5
R
FLAT
ON−Resistance Flatness I
ON
= 8 mA,
V
IS
= 0 V to V
CC
2.7
3.3
4.2
3.6
3.3
2.9
R
ON
Delta ON− Resistance I
ON
= 8 mA,
V
IS
= 0 V to V
CC
2.7
3.3
4.2
0.8
0.7
0.5
P1-P3P4-P6P7-P7

NLAS3257CMX2TCG

Mfr. #:
Buy NLAS3257CMX2TCG
Manufacturer:
ON Semiconductor
Description:
Multiplexer Switch ICs LOW-CAPACITANCE SPDT
Lifecycle:
New from this manufacturer.
Delivery:
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