IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH80N65X2-4
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 80 A
I
SM
Repetitive, pulse Width Limited by T
JM
320 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
200 ns
Q
RM
1.7 μC
I
RM
16.7 A
I
F
= 40A, -di/dt = 100A/μs
V
R
= 100V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 33 55 S
R
Gi
Gate Input Resistance 0.6
C
iss
8300 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 5010 pF
C
rss
1.6 pF
C
o(er)
280 pF
C
o(tr)
1160 pF
t
d(on)
32 ns
t
r
24 ns
t
d(off)
70 ns
t
f
11 ns
Q
g(on)
140 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
50 nC
Q
gd
40 nC
R
thJC
0.14 C/W
R
thCS
0.21 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
