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SI4831BDY-T1-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09
Vishay Siliconix
Si4831BDY
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
3 V
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
- On-Resistance (Ω)
I
D
- Drain Current (A)
R
DS(on)
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 5 A
0
2
4
6
8
10
0 3.6 7.2 10.8 14.4 18.0
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 10 V
V
DS
= 20 V
V
DS
= 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.8 1.6 2.4 3.2 4.0
T
J
= 125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
J
= 25 °C
- 55 °C
C
iss
C
rss
C
oss
0
200
400
600
800
1000
0 6 12 18 24 30
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
(Normalized)
- On-ResistanceR
DS(on)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 5 A
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4831BDY
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0
1
10
100
0.0 0.3 0.6 0.9 1.2 1.5
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
- 0.3
- 0.1
0.1
0.3
0.5
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
V
GS(th)
Variance (V)
I
D
= 5 mA
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
GS
- Gate-to-Source Voltage (V)
0
0.04
0.08
0.12
0.16
0.20
012345678 910
T
A
= 25 °C
- On-Resistance (Ω)R
DS(on)
T
A
= 125 °C
I
D
= 5 A
0
12
24
36
48
60
0.001 0.01 0.1 1 10
Time (s)
Power (W)
Safe Operating Area, Junction-to-Case
1
0.1 1 10 100
0.01
10
1 ms
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)*
100
DC
1 s
10 s
www.vishay.com
6
Document Number: 70483
S09-0394-Rev. B, 09-Mar-09
Vishay Siliconix
Si4831BDY
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
3
5
6
8
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power Dissipation (W)
P1-P3P4-P6P7-P9

SI4831BDY-T1-E3

Mfr. #:
Buy SI4831BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 6.6A 3.3W
Lifecycle:
New from this manufacturer.
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