SI4831BDY-T1-GE3 Datasheet SI4831BDY-T1-E3, SI4831BDY-T1-GE3 | P1-P3

Vishay Siliconix

Si4831BDY

Document Number: 70483

S09-0394-Rev. B, 09-Mar-09

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• LITTLE FOOT

®

Plus Power MOSFET

• 100 % R

g

Tested

APPLICATIONS

• HDD

• Asynchronous Rectification

MOSFET PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

a

Q

g

(Typ.)

- 30

0.042 at V

GS

= - 10 V - 6.6

7.8

0.065 at V

GS

= - 4.5 V - 5.3

SCHOTTKY PRODUCT SUMMARY

V

KA

(V)

V

F

(V)

Diode Forward Voltage I

D

(A)

a

30 0.53 V at 3 A 3.0

AK

A K

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4831BDY-T1-E3 (Lead (Pb)-free)

Si4831BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

K

A

S

G

D

P-Channel MOSFET

Notes:

a. Based on T

C

= 25 °C.

b. Surface Mounted on FR4 board.

c. t ≤ 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage (MOSFET)

V

DS

- 30

VReverse Voltage (Schottky)

V

KA

- 30

Gate-Source Voltage (MOSFET)

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C) (MOSFET)

T

C

= 25 °C

I

D

- 6.6

A

T

C

= 70 °C

- 5.2

T

A

= 25 °C

- 5.1

b, c

T

A

= 70 °C

- 3.9

b, c

Pulsed Drain Current (MOSFET)

I

DM

- 30

Continuous Source Current (MOSFET Diode Conduction)

T

C

= 25 °C

I

S

- 2.7

T

A

= 25 °C

- 1.6

b, c

Average Forward Current (Schottky)

I

F

- 3

b

Pulsed Forward Current (Schottky)

I

FM

- 20

Maximum Power Dissipation (MOSFET and Schottky)

T

C

= 25 °C

P

D

3.3

W

T

C

= 70 °C

2.1

T

A

= 25 °C

2.0

b, c

T

A

= 70 °C

1.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (MOSFET and Schottky)

b, c, d

R

thJA

53 62.5

°C/W

Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)

R

thJF

30 37

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2

Document Number: 70483

S09-0394-Rev. B, 09-Mar-09

Vishay Siliconix

Si4831BDY

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

DS

= 0 V, I

D

= - 250 µA

- 30 V

V

DS

Temperature Coefficient ΔV

DS/TJ

I

D

= 250 µA

- 30

mV/°C

V

GS(th)

Temperature Coefficient

Δ

V

GS(th)/TJ

3.6

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1 - 3 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V

- 1

µA

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 75 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≥ - 5 V, V

GS

= - 10 V

- 10 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 5 A

0.034 0.042

Ω

V

GS

= - 4.5 V, I

D

= - 3 A

0.052 0.065

Forward Transconductance

a

g

fs

V

DS

= - 15 V, I

D

= - 5 A

11 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 15 V, V

GS

= 0 V, f = 1 MHz

625

pF

Output Capacitance

C

oss

150

Reverse Transfer Capacitance

C

rss

115

Total Gate Charge

Q

g

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 5 A

17 26

nC

V

DS

= - 15 V, V

GS

= - 4.5 V, I

D

= - 5 A

7.8 12

Gate-Source Charge

Q

gs

1.6

Gate-Drain Charge

Q

gd

3.5

Gate Resistance

R

g

f = 1 MHz 7 14 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 15 V, R

L

= 3 Ω

I

D

≅ - 5 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

35 55

ns

Rise Time

t

r

100 150

Turn-Off Delay Time

t

d(off)

22 35

Fall Time

t

f

12 20

Tu r n- O n D e lay T i m e

t

d(on)

V

DD

= - 15 V, R

L

= 3 Ω

I

D

≅ - 5 A, V

GEN

= - 10 V, R

g

= 1 Ω

816

Rise Time

t

r

816

Turn-Off Delay Time

t

d(off)

24 40

Fall Time

t

f

714

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 3.3

A

Pulse Diode Forward Current

a

I

SM

- 30

Body Diode Voltage

V

SD

I

S

= - 1.4 A, V

GS

= 0 V

- 0.78 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 2 A, dI/dt = 100 A/µs, T

J

= 25 °C

30 45 ns

Body Diode Reverse Recovery Charge

Q

rr

15 25 nC

Reverse Recovery Fall Time

t

a

14

ns

Reverse Recovery Rise Time

t

b

16

Document Number: 70483

S09-0394-Rev. B, 09-Mar-09

www.vishay.com

3

Vishay Siliconix

Si4831BDY

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SCHOTTKY SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward Voltage Drop

V

F

I

F

= 3 A

0.485 0.53

V

I

F

= 3 A, T

J

= 125 °C

0.42 0.47

Maximum Reverse Leakage Current

I

rm

V

R

= 30 V

0.008 0.1

mA

V

R

= 30 V, T

J

= 75 °C

0.4 5

V

R

= 30 V, T

J

= 125 °C

6.5 20

Junction Capacitance

C

T

V

R

= 15 V

102

pF

SI4831BDY-T1-GE3

SI4831BDY-T1-GE3

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