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NVMFS5834NLT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 6
1 Publication Order Number:
NTMFS5834NL/D
NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
• Low R
DS(on)
• Low Capacitance
• Optimized Gate Charge
• NVMFS5834NLWF − Wettable Flanks Product
• NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
14
A
T
A
= 100°C 12
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C
P
D
3.6
W
T
A
= 100°C 2.5
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
75
A
T
C
= 100°C 63
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
P
D
107
W
T
C
= 100°C 75
Pulsed Drain
Current
t
p
= 10 ms
I
DM
276 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+175
°C
Source Current (Body Diode) I
S
75 A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS 48 mJ
IAS 31 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Bottom) (Note 1)
R
q
JC
1.4
°C/W
Junction−to−Case (Top) (Note 1)
R
q
JC
4.5
Junction−to−Ambient Steady State (Note 1)
R
q
JA
41
Junction−to−Ambient Steady State (Note 2)
R
q
JA
75
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
2
) pad size.
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
40 V
9.3 mW @ 10 V
75 A
13.6 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
XXXXXX
AYWZZ
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NTMFS5834NL, NVMFS5834NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
34.7
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25 °C 1.0
mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 3.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 20 A 7.1 9.3
mW
V
GS
= 4.5 V I
D
= 20 A 11.3 13.6
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 20 A 29 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
1231
pF
Output Capacitance C
OSS
198
Reverse Transfer Capacitance C
RSS
141
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 20 V; I
D
= 20 A 24
nC
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 20 A
12
Threshold Gate Charge Q
G(TH)
1.0
Gate−to−Source Charge Q
GS
4.2
Gate−to−Drain Charge Q
GD
6.3
Plateau Voltage V
GP
3.4 V
Gate Resistance R
G
0.7
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A, R
G
= 2.5 W
10
ns
Rise Time t
r
56.4
Turn−Off Delay Time t
d(OFF)
17.4
Fall Time t
f
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.84 1.2
V
T
J
= 125°C 0.72
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 20 A
18
ns
Charge Time t
a
10
Discharge Time t
b
8.0
Reverse Recovery Charge Q
RR
11 nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS5834NL, NVMFS5834NL
http://onsemi.com
3
TYPICAL CHARACTERISTICS
012345
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 V
4.0 V
5.0 V
4.5 V
T
J
= 25°C
3.0 V
3.5 V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
23456
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0.000
0.010
0.020
0.030
0.040
0.050
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= 20 A
T
J
= 25°C
0.004
0.008
0.012
0.016
0.020
5 15253545556575
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
0.6
0.8
1.0
1.2
1.4
1.6
2.0
−50 −25 0 25 50 75 100 125 175
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
V
GS
= 10 V
I
D
= 20 A
100
1,000
10,000
10 20 30 40
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
0.006
0.010
0.014
0.018
150
1.8
P1-P3P4-P6

NVMFS5834NLT3G

Mfr. #:
Buy NVMFS5834NLT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 40V 75A 9.3MOH
Lifecycle:
New from this manufacturer.
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