SQM120N06-06_GE3 Datasheet SQM120N06-06_GE3 | P1-P3

SQM120N06-06

www.vishay.com

Vishay Siliconix

S15-1876-Rev. C, 10-Aug-15

1

Document Number: 67065

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• AEC-Q101 qualified

d

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) 60

R

DS(on)

(Ω) at V

GS

= 10 V 0.006

I

D

(A) 120

Configuration Single

Package TO-263

TO-263

Top View

G

D

S

G

D

S

D

G

SN-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

60

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

120

A

T

C

= 125 °C 80

Continuous Source Current (Diode Conduction)

a

I

S

120

Pulsed Drain Current

b

I

DM

480

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

65

Single Pulse Avalanche Energy E

AS

211 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

230

W

T

C

= 125 °C 76

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.65

SQM120N06-06

www.vishay.com

Vishay Siliconix

S15-1876-Rev. C, 10-Aug-15

2

Document Number: 67065

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 μA 60 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.5 3.0 3.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 60 V - - 1

μA V

GS

= 0 V V

DS

= 60 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 60 V, T

J

= 175 °C - - 250

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

≥ 5 V 120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 30 A - 0.0045 0.0060

ΩV

GS

= 10 V I

D

= 30 A, T

J

= 125 °C - - 0.0104

V

GS

= 10 V I

D

= 30 A, T

J

= 175 °C - - 0.0129

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 30 A - 94 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 25 V, f = 1 MHz

- 5196 6495

pF Output Capacitance C

oss

- 708 885

Reverse Transfer Capacitance C

rss

- 336 420

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 30 V, I

D

= 75 A

-96.5145

nC Gate-Source Charge Q

gs

-24.6-

Gate-Drain Charge

c

Q

gd

-27.2-

Gate Resistance R

g

f = 1 MHz 0.3 1 1.7 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= 30 V, R

L

= 0.4 Ω

I

D

≅ 75 A, V

GEN

= 10 V, R

g

= 1 Ω

-1624

ns

Rise Time

c

t

r

-1421

Turn-Off Delay Time

c

t

d(off)

-3451

Fall Time

c

t

f

-914

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--480A

Forward Voltage V

SD

I

F

= 75 A, V

GS

= 0 - 0.9 1.5 V

SQM120N06-06

www.vishay.com

Vishay Siliconix

S15-1876-Rev. C, 10-Aug-15

3

Document Number: 67065

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Transconductance

Capacitance

0

25

50

75

100

125

150

175

200

225

0 4 8 12 16 20

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 10 V thru 7 V

V

GS

= 6 V

V

GS

= 5 V

0.0

0.3

0.6

0.9

1.2

1.5

0 2 4 6 8 10

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= -55 °C

T

C

= 125 °C

0.000

0.004

0.008

0.012

0.016

0.020

0 20 40 60 80 100 120

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 10 V

0

30

60

90

120

150

0 2 4 6 8 10

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= -55 °C

T

C

= 125 °C

T

C

= 25 °C

0

40

80

120

160

200

0 1428425670

g

fs

-Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= -55 °C

T

C

= 25 °C

0

2000

4000

6000

8000

10 000

0 10 20 30 40 50 60

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SQM120N06-06_GE3

SQM120N06-06_GE3

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