PBSS304NZ_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 3 of 14
NXP Semiconductors
PBSS304NZ
60 V, 5.2 A NPN low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 60 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 5.2 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-10.4A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.7W
[2]
-1.7W
[3]
-2.0W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
006aaa560
T
amb
(°C)
−75 17512525 75−25
1.0
0.5
1.5
2.0
2.5
P
tot
(W)
0
(3)
(2)
(1)
