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ATF-511P8-TR2

P1-P3P4-P6P7-P9P10-P12P13-P15
10
Figure 34. MSG/MAG & |S21|
2
(dB) @
4.5V, 100 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, V
DS
= 4.5V, I
DS
= 100 mA
Freq. S
11
S
21
S
12
S
22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.93 -125.4 30.99 35.43 115.3 -34.72 0.01 28.6 0.65 -151.1 32.94
0.2 0.93 -152.1 25.70 19.27 101.4 -33.88 0.02 18.9 0.70 -166.3 29.84
0.3 0.93 -162.8 22.34 13.09 95.5 -33.70 0.02 15.5 0.72 -172.2 27.95
0.4 0.92 -168.7 19.90 9.88 91.8 -33.49 0.02 16.5 0.72 -176.0 26.73
0.5 0.91 -170.8 18.78 8.68 89.5 -32.50 0.02 17.7 0.69 -177.2 25.59
0.6 0.91 -174.4 17.21 7.25 86.6 -32.42 0.02 17.6 0.7 -179.7 24.80
0.7 0.92 -176.8 15.88 6.22 84.4 -32.20 0.02 19.1 0.7 178.3 23.96
0.8 0.92 -179.0 14.72 5.44 82.3 -32.13 0.02 18.8 0.70 176.6 23.38
0.9 0.92 178.7 13.69 4.83 80.4 -32.02 0.02 18.9 0.70 175.2 22.86
1 0.91 177.0 12.73 4.33 78.8 -31.85 0.02 20.6 0.70 173.8 22.22
1.5 0.92 169.8 9.11 2.85 70.2 -30.95 0.02 24.8 0.70 167.8 20.08
2 0.91 163.9 6.49 2.11 62.8 -30.00 0.03 27.8 0.71 162.3 18.19
2.5 0.91 158.8 4.52 1.68 55.2 -29.22 0.03 29.0 0.71 157.2 14.84
3 0.91 153.0 2.89 1.39 47.7 -28.39 0.03 29.0 0.71 151.6 12.76
4 0.91 143.7 0.20 1.02 33.1 -26.77 0.04 27.2 0.70 140.4 9.92
5 0.91 134.0 -2.08 0.78 19.2 -25.62 0.05 22.2 0.68 128.7 7.42
6 0.90 125.0 -4.20 0.61 7.3 -24.73 0.05 17.3 0.64 117.4 4.79
7 0.90 115.7 -6.04 0.49 -1.6 -23.99 0.06 14.3 0.56 109.1 2.45
8 0.90 106.4 -7.35 0.42 -7.7 -23.23 0.06 11.2 0.51 106.4 0.71
9 0.90 96.5 -8.14 0.39 -16.4 -22.04 0.07 7.2 0.51 105.0 0.01
10 0.9 86.1 -8.45 0.37 -25.3 -20.89 0.09 0.5 0.54 99.3 -0.37
11 0.89 75.4 -9.46 0.33 -35.2 -20.08 0.09 -7.5 0.58 90.9 -1.33
12 0.90 63.8 -9.59 0.33 -46.1 -19.41 0.10 -16.7 0.62 81.3 -1.60
13 0.89 54.7 -10.42 0.30 -52.9 -19.02 0.11 -25.1 0.65 71.3 -1.93
14 0.90 46.5 -10.99 0.28 -59.8 -18.87 0.11 -31.7 0.67 61.4 -2.12
15 0.88 40.2 -11.15 0.27 -70.6 -18.71 0.11 -38.2 0.68 52.4 -2.66
16 0.90 33.5 -11.50 0.26 -71.7 -18.22 0.12 -45.5 0.70 43.3 -2.83
17 0.86 26.4 -11.50 0.26 -80.8 -18.28 0.12 -49.0 0.72 35.9 -3.33
18 0.86 19.3 -11.51 0.26 -92.6 -17.88 0.12 -54.8 0.74 27.9 -3.69
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
11
Figure 35. MSG/MAG & |S21|
2
(dB) @ 4V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, V
DS
= 4V, I
DS
= 200 mA
Freq. S
11
S
21
S
12
S
22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.94 -133.7 30.85 34.87 111.4 -37.28 0.01 28.2 0.73 -162.5 33.96
0.2 0.93 -156.9 25.31 18.41 99.5 -36.61 0.01 20.4 0.76 -172.6 30.89
0.3 0.93 -165.9 21.89 12.43 94.2 -36.19 0.01 20.2 0.78 -176.3 28.90
0.4 0.94 -170.9 19.48 9.42 90.9 -35.98 0.01 20.4 0.78 -179.5 27.70
0.5 0.93 -174.5 17.53 7.52 88.8 -35.84 0.01 23.0 0.78 178.5 26.73
0.6 0.93 -175.8 16.77 6.89 86.0 -34.69 0.01 23.5 0.76 177.3 25.83
0.7 0.93 -178.2 15.53 5.97 84.2 -34.42 0.01 25.0 0.75 175.5 24.98
0.8 0.92 179.7 14.28 5.17 82.5 -34.11 0.02 27.1 0.76 173.9 24.13
0.9 0.92 178.0 13.21 4.57 80.5 -33.77 0.02 29.2 0.76 172.5 23.60
1 0.93 176.3 12.34 4.13 78.6 -33.66 0.02 29.6 0.76 171.4 22.95
1.5 0.92 169.6 8.63 2.70 71.0 -32.21 0.02 34.5 0.76 165.3 20.34
2 0.93 164.4 6.12 2.02 63.5 -30.69 0.02 38.0 0.76 159.2 17.32
2.5 0.92 159.6 4.07 1.59 57.0 -29.46 0.03 39.4 0.76 154.1 14.52
3 0.92 154.2 2.30 1.30 50.3 -28.47 0.03 37.7 0.75 148.6 12.34
4 0.92 144.9 -0.31 0.96 37.4 -26.48 0.04 33.8 0.73 137.1 9.75
5 0.91 135.5 -2.55 0.74 25.4 -25.14 0.05 28.4 0.69 127.3 6.74
6 0.92 126.6 -4.30 0.60 15.1 -24.15 0.06 23.4 0.64 119.4 5.17
7 0.91 117.1 -5.64 0.52 6.50 -23.20 0.06 18.3 0.62 114.5 3.27
8 0.91 108.2 -6.81 0.45 -2.8 -22.06 0.07 12.3 0.62 108.5 2.03
9 0.90 99.1 -7.13 0.44 -13.7 -21.10 0.08 5.2 0.62 100.8 1.60
10 0.92 89.2 -7.76 0.40 -21.2 -20.40 0.09 -2.7 0.64 90.4 1.40
11 0.90 79.6 -8.39 0.38 -30.0 -19.67 0.10 -11.0 0.65 79.3 0.26
12 0.91 70.9 -8.92 0.35 -42.9 -19.28 0.10 -19.9 0.66 67.0 0.15
13 0.90 62.2 -9.42 0.33 -48.9 -19.11 0.11 -27.2 0.67 57.1 -0.69
14 0.94 53.8 -9.84 0.32 -60.1 -18.86 0.11 -33.1 0.68 48.7 -1.20
15 0.87 45.0 -10.51 0.29 -68.5 -18.58 0.11 -38.4 0.7 40.0 -1.56
16 0.89 37.7 -10.74 0.29 -72.4 -18.59 0.11 -43.7 0.71 36.3 -1.97
17 0.89 30.5 -10.03 0.31 -85.1 -17.88 0.12 -48.3 0.73 28.8 -2.50
18 0.88 25.4 -11.77 0.25 -91.8 -17.72 0.13 -59.0 0.74 19.5 -2.82
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
12
ATF-511P8 Typical Scattering Parameters, V
DS
= 3V, I
DS
= 200 mA
Freq. S
11
S
21
S
12
S
22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.95 -137.1 29.51 29.89 109.9 -36.88 0.01 25.2 0.78 -166.0 33.29
0.2 0.94 -159.0 23.89 15.65 98.7 -36.27 0.01 19.8 0.81 -174.5 30.18
0.3 0.94 -167.3 20.46 10.54 93.8 -36.20 0.01 18.0 0.82 -177.6 28.47
0.4 0.94 -172.0 18.04 7.98 90.7 -35.82 0.01 20.5 0.83 179.4 26.98
0.5 0.93 -175.3 16.10 6.38 88.7 -35.59 0.01 22.4 0.83 177.6 25.75
0.6 0.93 -176.8 15.36 5.86 85.9 -34.34 0.01 24.0 0.81 176.3 24.89
0.7 0.93 -178.7 14.14 5.09 84.2 -34.27 0.01 24.8 0.81 174.6 24.28
0.8 0.93 179.1 12.87 4.4 82.6 -34.12 0.02 27.1 0.81 173.1 23.42
0.9 0.93 177.3 11.82 3.89 80.6 -33.66 0.02 29.1 0.81 171.7 22.69
1 0.93 176.1 10.91 3.51 78.9 -33.55 0.02 29.3 0.81 170.7 22.23
1.5 0.93 169.4 7.24 2.30 71.8 -31.97 0.02 35.4 0.81 164.6 19.64
2 0.93 164.0 4.75 1.72 64.7 -30.60 0.03 38.5 0.81 158.5 16.34
2.5 0.93 159.1 2.73 1.36 58.5 -29.39 0.03 38.5 0.81 153.4 14.08
3 0.92 154.0 0.93 1.11 51.6 -28.15 0.03 37.4 0.80 147.6 11.72
4 0.93 144.8 -1.58 0.83 38.7 -26.26 0.04 33.1 0.78 135.8 9.24
5 0.92 135.2 -3.78 0.64 27.3 -24.91 0.05 27.7 0.74 125.0 6.28
6 0.93 126.0 -5.54 0.52 17.2 -24.05 0.06 22.1 0.68 115.6 4.39
7 0.91 116.6 -7.07 0.44 10.5 -23.11 0.07 17.2 0.63 110.7 1.96
8 0.91 107.4 -7.66 0.41 2.06 -22.08 0.07 12.1 0.62 106.3 1.32
9 0.90 98.4 -8.06 0.39 -5.6 -21.04 0.08 5.0 0.63 99.5 0.60
10 0.92 89.0 -8.99 0.35 -15.9 -20.23 0.09 -2.7 0.64 89.8 0.49
11 0.92 79.5 -9.12 0.35 -25.8 -19.45 0.10 -12.4 0.66 78.7 0.19
12 0.91 70.1 -9.28 0.34 -35.9 -19.08 0.11 -21.4 0.68 66.3 -0.19
13 0.91 61.9 -9.71 0.32 -39.9 -18.93 0.11 -29.2 0.69 56.4 -0.68
14 0.92 51.8 -10.04 0.31 -54.7 -18.89 0.11 -35.6 0.70 47.9 -0.40
15 0.88 44.1 -10.01 0.31 -59.8 -18.63 0.11 -40.7 0.72 39.0 -1.57
16 0.87 36.4 -10.16 0.31 -77.5 -18.83 0.11 -44.7 0.73 35.3 -1.85
17 0.83 30.1 -10.61 0.31 -87.2 -18.17 0.12 -51.2 0.74 27.7 -2.42
18 0.85 24.0 -11.96 0.25 -97.4 -17.69 0.13 -58.3 0.75 18.3 -3.71
Figure 36. MSG/MAG & |S21|
2
(dB) @ 3V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
P1-P3P4-P6P7-P9P10-P12P13-P15

ATF-511P8-TR2

Mfr. #:
Buy ATF-511P8-TR2
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs High Linearity
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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