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IRLR024TR

P1-P3P4-P6P7-P9P10-P11
IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com
Vishay Siliconix
S14-1677-Rev. E, 18-Aug-14
1
Document Number: 91322
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Surface mount (IRLR024, SiHLR024)
• Straight lead (IRLU024, SiHLU024)
• Available in tape and reel
• Logic-level gate drive
•R
DS(on)
specified at V
GS
= 4 V and 5 V
• Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 541 μH, R
g
= 25 , I
AS
= 14 A (see fig. 12).
c. I
SD
17 A, dI/dt 140 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
()V
GS
= 5.0 V 0.10
Q
g
(Max.) (nC) 18
Q
gs
(nC) 4.5
Q
gd
(nC) 12
Configuration Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
Available
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free - SiHLR024TRL-GE3 SiHLR024TR-GE3 SiHLU024-GE3
Lead (Pb)-free
IRLR024PbF - IRLR024TRPbF
a
IRLU024PbF
SiHLR024-E3 - SiHLR024T-E3
a
SiHLU024-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 10
Continuous Drain Current V
GS
at 5.0 V
T
C
= 25 °C
I
D
14
AT
C
= 100 °C 9.2
Pulsed Drain Current
a
I
DM
56
Linear Derating Factor 0.33
W/°C
Linear Derating Factor (PCB Mount)
e
0.020
Single Pulse Avalanche Energy
b
E
AS
53 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
42
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.5
Peak Diode Recovery dV/dt
c
dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 260
IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com
Vishay Siliconix
S14-1677-Rev. E, 18-Aug-14
2
Document Number: 91322
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
--110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
--50
Maximum Junction-to-Case (Drain) R
thJC
--3.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.068 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.0 - 2.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 10 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 25
μA
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 5.0 V I
D
= 8.4 A
b
- - 0.10
V
GS
= 4.0 V I
D
= 7.0 A
b
- - 0.14
Forward Transconductance g
fs
V
DS
= 25 V, I
D
= 8.4 A
b
7.3 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 870 -
pFOutput Capacitance C
oss
- 360 -
Reverse Transfer Capacitance C
rss
-53-
Total Gate Charge Q
g
V
GS
= 5.0 V
I
D
= 17 A, V
DS
= 48 V,
see fig. 6 and 13
b
--18
nC Gate-Source Charge Q
gs
--4.5
Gate-Drain Charge Q
gd
--12
Turn-On Delay Time t
d(on)
V
DD
= 30 V, I
D
= 17 A,
R
g
= 9.0 , R
D
= 1.7 , see fig. 10
b
-11-
ns
Rise Time t
r
- 110 -
Turn-Off Delay Time t
d(off)
-23-
Fall Time t
f
-41-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--14
A
Pulsed Diode Forward Current
a
I
SM
--56
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/μs
b
- 130 260 ns
Body Diode Reverse Recovery Charge Q
rr
-0.751.5μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com
Vishay Siliconix
S14-1677-Rev. E, 18-Aug-14
3
Document Number: 91322
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
P1-P3P4-P6P7-P9P10-P11

IRLR024TR

Mfr. #:
Buy IRLR024TR
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 844-IRLR024TRPBF
Lifecycle:
New from this manufacturer.
Delivery:
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