IRF7416PbF
4 www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1000
2000
3000
4000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 20406080100
G
GS
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
V = -24V
V = -15V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE 9
I = -5.6A
D
1
10
100
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
-V , Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
