T-Ma x
TM
TO-264
N-Channel MOSFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die MOSFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
56
35
175
±30
1200
28
Min Typ Max
780
0.16
0.11
-55 150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current,
Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
T
L
W
T
Torque
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
FEATURES
• Fast switching with low EMI/RFI
• Low R
DS(on)
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT56M50B2
APT56M50L
500V, 56A, 0.10Ω Max
APT56M50B2
APT56M50L
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power
MOSFET. A proprietary planar stripe design yields excellent reliability and manu-
facturability. Low switching loss is achieved with low input capacitance and ultra
low C
rss
"Miller" capacitance. The intrinsic gate resistance and capacitance of
the poly-silicon gate structure help control slew rates during switching, resulting
in low EMI and reliable paralleling, even when switching at very high frequency.
Reliability in fl yback, boost, forward, and other circuits is enhanced by the high
avalanche energy capability.
Microsemi Website - http://www.microsemi.com
050-8073 Rev C 8-2011