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BC857RAZ

P1-P3P4-P6P7-P9P10-P11
Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
BC857RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 7 June 2017 4 / 11
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 385 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 261 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-024488
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
BC857RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 7 June 2017 5 / 11
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= -30 V; I
E
= 0 A; T
amb
= 25 °C - - -15 nAI
CBO
collector-base cut-off
current
V
CB
= -30 V; I
E
= 0 A; T
j
= 150 °C - - -5 µA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
h
FE
DC current gain V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C 200 - 450
I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C - - -100 mVV
CEsat
collector-emitter
saturation voltage
I
C
= -100 mA; I
B
= -5 mA; T
amb
= 25 °C - - -300 mV
I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C - -760 - mVV
BEsat
base-emitter saturation
voltage
I
C
= -100 mA; I
B
= -5 mA; T
amb
= 25 °C - -900 - mV
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C -600 -660 -725 mVV
BE
base-emitter voltage
V
CE
= -5 V; I
C
= -10 mA; T
amb
= 25 °C - -710 -820 mV
C
C
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 4 pF
C
E
emitter capacitance V
EB
= -0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 10 - pF
f
T
transition frequency V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
100 - - MHz
NF noise figure V
CE
= -5 V; I
C
= -0.2 mA; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz; T
amb
= 25 °C
- - 10 dB
V
CE
= -5 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3. DC current gain as a function of collector
current; typical values
T
amb
= 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Nexperia
BC857RA
45 V, 100 mA PNP/PNP general-purpose double transistors
BC857RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 7 June 2017 6 / 11
- 200
- 1200
- 400
- 600
- 800
- 1000
mle193
- 10
- 2
- 10
- 1
(1)
- 1
I
C
(mA)
V
BE
(mV)
- 10 - 10
2
- 10
3
(3)
(2)
V
CE
= -5 V
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 5. Base-emitter voltage as a function of collector
current; typical values
- 200
- 1200
- 400
- 600
- 800
- 1000
mle195
- 1- 10
- 1
I
C
(mA)
V
BEsat
(mV)
- 10 - 10
2
- 10
3
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6. Base-emitter saturation voltage as a function of
collector current; typical values
- 10
4
- 10
3
- 10
2
- 10
mle194
- 10
- 1
- 1 - 10
I
C
(mA)
V
CEsat
(mV)
- 10
2
- 10
3
(2)
(3)
(1)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
T
amb
= 25 °C;
V
CE
= -5 V;
f = 100 MHz
Fig. 8. Transition frequency as a function of collector
current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
P1-P3P4-P6P7-P9P10-P11

BC857RAZ

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Nexperia
Description:
Bipolar Transistors - BJT BC857RA/SOT1268 DFN1412-6
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