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IXTH75N10L2

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH75N10L2
IXTT75N10L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 37.5A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1.0
10.0
100.0
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - NanoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_75N10L2(7R)9-25-09
IXTH75N10L2
IXTT75N10L2
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
P1-P3P4-P5

IXTH75N10L2

Mfr. #:
Buy IXTH75N10L2
Manufacturer:
Littelfuse
Description:
MOSFET LinearL2 Powr MOSFET w/extended FBSOA
Lifecycle:
New from this manufacturer.
Delivery:
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