SPB77N06S2-12

P1-P3 P4-P6 P7-P8

2003-05-09

Page 1

SPP77N06S2-12

SPB77N06S2-12

OptiMOS



Power-Transistor

Product Summary

V

DS

55 V

R

DS(on)

12 mΩ

I

D

80 A

Feature

• N-Channel

• Enhancement mode

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

P- TO263 -3-2 P- TO220 -3-1

Marking

2N0612

2N0612

Type Package Ordering Code

SPP77N06S2-12 P- TO220 -3-1 Q67060-S6029

SPB77N06S2-12 P- TO263 -3-2 Q67060-S6030

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

C

=25°C

I

D

80

56

A

Pulsed drain current

T

C

=25°C

I

D puls

320

Avalanche energy, single pulse

I

D

=77A, V

DD

=25V, R

GS

=25Ω

E

AS

280 mJ

Repetitive avalanche energy, limited by T

jmax

1)

E

AR

16

Reverse diode dv/dt

I

S

=77A, V

DS

=44V, di/dt=200A/µs, T

jmax

=175°C

dv/dt 6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

C

=25°C

P

tot

158 W

Operating and storage temperature T

j

, T

stg

-55... +175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

2003-05-09

Page 2

SPP77N06S2-12

SPB77N06S2-12

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

R

thJC

- 0.63 0.95 K/W

Thermal resistance, junction - ambient, leaded

R

thJA

- - 62

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

2)

R

thJA

-

-

-

-

62

40

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0V, I

D

=1mA

V

(BR)DSS

55 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=93µA

V

GS(th)

2.1 3 4

Zero gate voltage drain current

V

DS

=55V, V

GS

=0V, T

j

=25°C

V

DS

=55V, V

GS

=0V, T

j

=125°C

I

DSS

-

-

0.01

1

1

100

µA

Gate-source leakage current

V

GS

=20V, V

DS

=0V

I

GSS

- 1 100 nA

Drain-source on-state resistance

V

GS

=10V, I

D

=38A

R

DS(on)

- 9.8 12

mΩ

1

Defined by design. Not subject to production test.

2

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2003-05-09

Page 3

SPP77N06S2-12

SPB77N06S2-12

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

≥2*I

D

*R

DS(on)max

,

I

D

=56A

27 54 - S

Input capacitance C

iss

V

GS

=0V, V

DS

=25V,

f=1MHz

- 1770 2350 pF

Output capacitance C

oss

- 460 610

Reverse transfer capacitance C

rss

- 120 180

Turn-on delay time t

d(on)

V

DD

=30V, V

GS

=10V,

I

D

=77A,

R

G

=6.2Ω

- 14 20 ns

Rise time t

r

- 27 40

Turn-off delay time t

d(off)

- 34 50

Fall time t

f

- 26 39

Gate Charge Characteristics

Gate to source charge Q

gs

V

DD

=44V, I

D

=77A - 9 12 nC

Gate to drain charge Q

gd

- 18 28

Gate charge total Q

g

V

DD

=44V, I

D

=77A,

V

GS

=0 to 10V

- 45 60

Gate plateau voltage V

(plateau)

V

DD

=44V, I

D

=77A - 5.9 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

C

=25°C - - 80 A

Inv. diode direct current, pulsed

I

SM

- - 320

Inverse diode forward voltage V

SD

V

GS

=0V, I

F

=77A - 1 1.3 V

Reverse recovery time t

rr

V

R

=30V, I

F

=l

S

,

di

F

/dt=100A/µs

- 45 60 ns

Reverse recovery charge Q

rr

- 64 80 nC

P1-P3 P4-P6 P7-P8

SPB77N06S2-12

Mfr. #:

Buy SPB77N06S2-12

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 55V 80A D2PAK

Lifecycle:

New from this manufacturer.

Delivery:

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