FDS6162N3

May 2003
2002 Fairchild Semiconductor Corporation
FDS6162N3 Rev B2 (W)
FDS6162N3
20V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
21 A, 20 V R
DS(ON)
= 4.5 m @ V
GS
= 4.5 V
R
DS(ON)
= 6.0 m @ V
GS
= 2.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
45
36
27
18
Bottom-side
Drain Contact
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous (Note 1a) 21 A
Pulsed 60
P
D
Power Dissipation
(Note 1a) 3.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 40
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
0.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6162N3 FDS6162N3 13’’ 12mm 2500 units
FDS6162N3
FDS6162N3 Rev B2 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 µA
20
V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
13
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 12 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –12 V , V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
0.6 0.9 1.5 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–4
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 21 A
V
GS
= 2.5 V, I
D
= 18 A
V
GS
= 4.5 V, I
D
= 21 A, T
J
= 125°C
3.3
4.3
4.8
4.5
6.0
7.2
m
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 21 A 119 S
Dynamic Characteristics
C
iss
Input Capacitance 5521 pF
C
oss
Output Capacitance 1473 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
706 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.3
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 20 32 ns
t
r
Turn–On Rise Time 25 40 ns
t
d(off)
Turn–Off Delay Time 85 136 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
55 88 ns
Q
g
Total Gate Charge 52 73 nC
Q
gs
Gate–Source Charge 9 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, I
D
= 21 A,
V
GS
= 4.5 V
14.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2.5 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.5 A (Note 2)
0.6
1.2
V
t
rr
Diode Reverse Recovery Time 42 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 21 A,
d
iF
/d
t
= 100 A/µs
52 nC
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 40°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6162N3
FDS6162N3 Rev B2 (W)
Typical Characteristics
0
10
20
30
40
50
60
0.00 0.25 0.50 0.75 1.00 1.25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
2.0V
V
GS
=4.5V
1.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
0 15304560
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
3.0V
2.5V
4.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 21A
V
GS
= 4.5V
0.002
0.004
0.006
0.008
0.01
0.012
12345
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 10.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
11.21.41.61.82
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
=125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6162N3

FDS6162N3

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 20V N-Ch PowerTrench
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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