4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
ISSI
®
IS61C3216AL
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 5 pF
COUT Output Capacitance VOUT = 0V 7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.2 VDD + 0.5 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND VIN VDD Com. 1 1 µA
Ind. 2 2
ILO Output Leakage GND VOUT VDD Com. 1 1 µA
Outputs Disabled Ind. 2 2
Note:
1. V
IL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
5
Rev. A
09/26/05
ISSI
®
IS61C3216AL
IS61C3216AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
Symbol Parameter Test Conditions Min. Max. Unit
I
CC1 VDD Operating VDD = VDD MAX., CE = VIL
Com.
—40 mA
Supply Current IOUT = 0 mA, f = 0
Ind.
—45
ICC2 VDD Dynamic Operating VDD = VDD MAX., CE = VIL
Com.
—50 mA
Supply Current IOUT = 0 mA, f = fMAX
Ind.
—55
typ.
(2)
35
I
SB1 TTL Standby Current VDD = VDD MAX.,
Com.
—1 mA
(TTL Inputs) VIN = VIH or VIL
Ind.
—1
CE VIH, f = 0
ISB2 CMOS Standby VDD = VDD MAX.,
Com.
350 µA
Current (CMOS Inputs) CE
VDD – 0.2V,
Ind.
400
VIN VDD – 0.2V, or typ.
(2)
200
VIN
0.2V, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5V, TA = 25
o
C and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
ISSI
®
IS61C3216AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-12
Symbol Parameter Min. Max. Unit
tRC Read Cycle Time 12 ns
tAA Address Access Time 12 ns
tOHA Output Hold Time 3 ns
tACE CE Access Time 12 ns
tDOE OE Access Time 6 ns
tHZOE
(2)
OE to High-Z Output 0 6 ns
tLZOE
(2)
OE to Low-Z Output 0 ns
tHZCE
(2
CE to High-Z Output 0 7 ns
tLZCE
(2)
CE to Low-Z Output 2 ns
tBA LB, UB Access Time 6 ns
tHZB LB, UB to High-Z Output 0 6 ns
tLZB LB, UB to Low-Z Output 0 ns
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0
to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Figure 1
Figure 2
AC TEST LOADS

IS61C3216AL-12TLI-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 512K 32Kx16 12ns Async SRAM
Lifecycle:
New from this manufacturer.
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