BC848BT116

BC848BW / BC848B
Transistors
Rev.A 4/5
Ta=25°C
V
CC
=40V
I
C
=101
B1
=101
B2
1.0
10 10
0
100
1000
10
t
f
-FALL TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
Fig.12 Fall time vs. collector
current
Ta=25°C
f=1MHz
0.5
1105
10
100
1
CAPACITANCE (pF)
REVERSE BIAS VOLTAGE (V)
Cib
Cob
Fig.13 Input/output capacitance
vs. voltage
Ta=25°C
0.5
10 100 50
0
5.0
50
0.5
VCE COLLECTOR-EMITTER VOLTAGE (V)
IC-COLLECTOR CURRENT (mA)
400MHz
400MHz300MHz200MHz100MHz
300MHz
200MHz
100MHz
Fig.14 Gain bandwidth product
Ta=25°C
V
CE
=5V
0.5 1.0
10 100 50
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
I
C
-COLLECTOR CURRENT (mA)
Fig.15 Gain bandwidth product
vs. collector current
Ta=25°C
V
CE=6V
f=270Hz
0.1
11010
0
10
1
100
0.1
h PARAMETER NORMALIZED TO 1mA
I
C
-COLLECTOR CURRENT (mA)
hfe
hfe
hre
hoe
hoe
hie
hie
hre
IC=1mA
hie=7.8k
hfe=280
hre=4.5×10
5
hoe=7.5µS
Fig.16 h parameter
vs. collector current
V
CB
=30V
0
7525 50 100 125 15
0
100P
10P
1P
10n
1n
0.1P
ICBO-COLLECTOR CUTOFF CURRENT
(A)
TA-AMBIENT TEMPERATURE (°C)
Fig.17 Collector cutoff current
Ta=25°C
V
CE
=5V
I
C
=100µA
R
S
=10k
10 1k100 10k 100
k
6
12
10
8
4
2
0
NF NOISE FIGURE (dB)
f-FREQUENCY (Hz)
Fig.18 Noise vs. collector current
Ta=25°C
V
CE
=5V
f=10Hz
0.01
0.1 1 10
10k
1k
100k
100
R
S
-SOURCE RESISTANCE ()
I
C
-COLLECTOR CURRENT (mA)
12dB
8dB
3dB
5dB
NF=1dB
Fig.19 Noise characteristics ( )
BC848BW / BC848B
Transistors
Rev.A 5/5
Ta=25°C
V
CE
=5V
f=30Hz
0.01
0.1 1 1
0
10k
1k
100k
100
R
S
-SOURCE RESISTANCE ()
I
C
-COLLECTOR CURRENT (mA)
12dB
8dB
3dB
5dB
NF=1dB
Fig.20 Noise characteristics ( )
Ta=25°C
V
CE
=5V
f=1kHz
0.01
0.1
1
1
0
10k
1k
100k
100
R
S
-SOURCE RESISTANCE ()
I
C
-COLLECTOR CURRENT (mA)
12dB
8dB
3dB
5dB
NF=1dB
Fig.21 Noise characteristics (
)
Ta=25°C
V
CE
=5V
f=10kHz
0.01
0.1 1 1
0
10k
1k
100k
100
RS-SOURCE RESISTANCE ()
I
C
-COLLECTOR CURRENT (mA)
8dB
3dB
5dB
NF=1dB
Fig.22
Noise characteristics (
)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

BC848BT116

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 30V 1MA
Lifecycle:
New from this manufacturer.
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