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BC848BWT106

P1-P3P4-P6
BC848BW / BC848B
Transistors
Rev.A 1/5
NPN General Purpose Transistor
BC848BW / BC848B
zFeatures
1) BV
CEO
minimum is 30V (I
C
=1mA)
2) Complements the BC858B / BC858BW.
zExternal dimensions (Unit : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
BC848B, BC848C
0~0.1
(2)(1)
(3)
0.1~0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2
0.7
±
0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
All terminals have same dimensions
All terminals have same dimensions
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95
0.95
+0.2
−0.1
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
30
30
5
0.1
0.35
150
−65~+150
Unit
V
V
V
A
P
C
0.2
0.2
W
W
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
BC848BW
BC848B
Storage temperature
Collector power
dissipation
∗ When mounted on a 7×5×0.6mm ceramic board.
∗
zElectrical characteristics (Ta=25°C)
Parameter
Conditions
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=30V
V
CB
=30V, Ta=150°C
I
C
/I
B
=100mA/5mA
I
C
/I
B
=10mA/0.5mA
V
CE
/I
C
=5V/10mA
V
CE
=5V, I
E
=−20mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
E
=0, f=1MHz
Typ.
−
−
−
−
−
−
−
−
200
3
8
−
V
CE
/I
C
=5V/2mA
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
BE(on)
V
CE(sat)
f
T
Cob
Cib
h
FE
Min.
30
30
5
−
−
0.58
−
−
−
−
−
200
Max.
−
−
−
100
5
0.77
0.6
0.25
−
−
−
450
Unit
V
V
V
µA
nA
V
V
MHz
pF
pF
−
(SPEC-C22
)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector output capacitance
DC current transfer ratio
BC848BW / BC848B
Transistors
Rev.A 2/5
zPackaging specifications
BC848BW
UMT3
G1K
T106
3000
BC848B
SST3
G1K
T116
3000
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
zElectrical characteristic curves
0
80
60
40
20
100
2
.0
0
1.0
I
B
=0mA
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Ta=25°C
I
C
−COLLECTOR CURRENT (mA)
V
CE
−COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics ( )
0
8.0
6.0
4.0
2.0
10.0
2
.0
0
1.0
I
B
=0µA
5
10
15
20
25
30
35
Ta=25°C
I
C
-COLLECTOR CURRENT (mA)
V
CE
-COLLECTOR-EMITTER VOLTAGE (V)
Fig.2 Grounded emitter output
characteristics ( )
Ta=25°C
0.1 101.0 100 100
0
100
1000
10
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
V
CE
=10V
1V
5V
Fig.3 DC current gain vs. collector current ( )
V
CE
=5V
0.1 101.0 100 100
0
100
1000
10
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
Ta=125°C
Ta=25°C
Ta=−55°C
Fig.4 DC current gain vs. collector current ( )
BC848BW / BC848B
Transistors
Rev.A 3/5
Ta =25°C
V
CE=5V
f=1kHz
0.01 10.1 10 10
0
100
1000
10
h
FE
-AC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
Fig.5 AC current gain vs. collector current
Ta=25°C
I
C
/I
B
=10
0.1 1.0 10 10
0
0.08
0.18
0.16
0.12
0.04
0
VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE
(V)
I
C
-COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
I
C
/I
B
=10
0.1 1.0 10 10
0
0.8
1.2
1.8
1.6
0.4
0
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE
(V
)
I
C
-COLLECTOR CURRENT (mA)
Fig.7 Base-emitter saturation
voltage vs. collector current
Ta=25°C
V
CE
=5V
0.1 1.0 10 100
0.8
1.2
1.8
1.6
0.4
0
VBE(ON)BASE EMITTER VOLTAGE (V)
I
C
-COLLECTOR CURRENT (mA)
Fig.8 Grounded emitter propagation
characteristics
Ta=25°C
I
C/IB=10
1.0
10 10
0
100
1000
10
t
on
-TURN ON TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
Fig.9 Turn-on time vs. collector
current
Ta=25°C
I
C
/I
B
=10
1.0
10 10
0
100
1000
10
t
r
-RISE TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
V
CC
=40V
Fig.10 Rise time vs. collector
current
Ta=25°C
I
C
=101
B1
=101
B2
1.0
10 10
0
100
1000
10
t
S
-STORAGE TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
V
CE
=15V
40V
3V
Fig.11 Storage time vs. collector
current
P1-P3P4-P6

BC848BWT106

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Description:
Bipolar Transistors - BJT NPN 30V 1MA
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