V
RRM
= 50 V - 1000 V
I
F
= 25 A
Features
• Types up to 1000 V V
RRM
KBJ Package
• Ideal for printed circuit board
• Reliable, low cost construction utilizing molded plastic technique
Parameter Symbol Unit
Silicon Bridge
Rectifier
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Conditions KBJ2506G KBJ2508G KBJ2510G
KBJ2506G thru KBJ2510G
• Low forward voltage drop, high current capability
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
epe
ve pea
reverse vo
age
RRM
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
R
thJA
°C/W
0.6
25 25 25
350 350 350
700
1000
500
800
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
10 10
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
KBJ2506G KBJ2508G
1.05 1.05
-55 to 150
μA
KBJ2510G
1.05 V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 110°C, with heatsink
Conditions
560420
V
R
= 50 V, T
j
= 125 °C
500 500
600
10
0.6 0.6
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 12.5 A, T
j
= 25 °C
Reverse current
I
R
V
F
Continuous forward current
I
F
A
T
C
≤ 110°C, without heatsink
4.2 4.24.2
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