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UMT2NTR

P1-P3
EMT2 / UMT2N / IMT2A
Transistors
Rev.A 1/2
General purpose (dual transistors)
EMT2 / UMT2N / IMT2A
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
zEquivalent circuits
(1)(2)(3)
(4) (5) (6)
(6)(5)(4)
(3) (2) (1)
EMT2 / UMT2N
IMT2A
Tr
2
Tr1 Tr1
Tr2
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−60
−50
−6
−150
300(TOTAL)
150(TOTAL)
EMT2 / UMT2N
IMT2A
150
−55
to +150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗1
∗2
zPackage, marking, and packaging specifications
EMT2
EMT6
T2
T2R
8000
IMT2A
SMT6
T2
T108
3000
UMT2N
UMT6
T2
TR
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
ROHM : EMT6
EMT2
ROHM : UMT6
EIAJ : SC-88
UMT2N
ROHM : SMT6
EIAJ : SC-74
IMT2A
0.22
1.2
1.6
(
1
)
(
2
)(
5
)
(
3
)
(
6
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0.1Min.
0~0.1
(
6
)
2.0
1.3
0.9
0.15
0.7
2.1
0.65
0.2
1.25
(
1
)
0.65
(
4
)
(
3
)
(
2
)
(
5
)
Each lead has same dimensions
(
6
)(
5
)(
4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
(
3
)
2.8
1.6
1.9
2.9
0.95
(
2
)
0.95
(
1
)
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
−60
−50
−6
−
−
−
120
−
−
−
−
−
−
−
−
140
−
−
−
−0.1
−0.1
−0.5
560
−
V
V
V
µA
µA
V
−
MHz
∗
Cob
−
45pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
V
CE
=−12V, I
E
=2mA, f=100MHz
V
CE
=−12V, I
E
=0A, f=1MHz
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V, I
C
=−1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
EMT2 / UMT2N / IMT2A
Transistors
Rev.A 2/2
zElectrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
−0.2
COLLECTOR CURRENT : Ic (
mA)
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
V
CE
= −6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=100˚C
25˚C
−40˚C
Fig.2 Grounded emitter output
characteristics (I)
−0.4
−4
−8
−1.20
−2
−6
−10
−0.8 −1.6 −2.0
−3.5µA
−7.0
−10.5
−14.0
−17.5
−21.0
−24.5
−28.0
−31.5
I
B
=0
Ta=25˚C
−35.0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
Fig.3 Grounded emitter output
characteristics (II)
−40
−80
−5−3 −4−2−1
−20
−60
−100
0
I
B
=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
−50µA
−100
−150
−200
−250
−500
−450
−400
−350
−300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
DC CURRENT GAIN : hFE
Ta=25˚C
VCE= −5V
−3V
−1V
COLLECTOR CURRENT : IC (
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50−100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
= −6V
Ta=100˚C
−40˚C
25˚C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
−0.1
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
−1
−0.5
−0.2
−0.05
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.8 Gain bandwidth product vs.
emitter current
50 1000.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
= −
12V
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
−0.1
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
−1
−0.5
−0.2
−0.05
COLLECTOR CURRENT : I
C
(
mA)
l
C
/l
B
=10
Ta=100˚C
25˚C
−40˚C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
−0.5 −20
2
5
10
−1 −2 −5 −10
20
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=
0A
I
C
=
0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
P1-P3

UMT2NTR

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Bipolar Transistors - BJT DUAL PNP 50V 150MA SOT-363
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