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BAV70LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1 Publication Order Number:
BAV70LT1/D
BAV70L, SBAV70L
Dual Switching Diode
Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage V
R
100 V
Forward Current I
F
200 mA
Peak Forward Surge Current I
FM(surge)
500 mA
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
1.5 A
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
I
FSM
31
16
10
4.5
2.5
1.0
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
A4 M G
G
SOT−23 (TO−236)
CASE 318
STYLE 9
BAV70LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
BAV70LT3G SOT−23
(Pb−Free)
10,000 / Tape & Ree
l
3
CATHODE
ANODE
1
2
ANODE
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A4 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
SBAV70LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBAV70LT3G SOT−23
(Pb−Free)
10,000 / Tape & Ree
l
www.onsemi.com
BAV70L, SBAV70L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol Min Max Unit
Reverse Breakdown Voltage
(I
(BR)
= 100 mA)
V
(BR)
100 −
V
Reverse Voltage Leakage Current (Note 3)
(V
R
= 25 V, T
J
= 150°C)
(V
R
= 100 V)
(V
R
= 70 V, T
J
= 150°C)
I
R
−
−
−
60
1.0
100
mA
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 1.5
pF
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
−
−
−
−
715
855
1000
1250
mV
Reverse Recovery Time R
L
= 100 W
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) (Figure 1)
t
rr
− 6.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while second diode is unbiased.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV70L, SBAV70L
www.onsemi.com
3
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
Curves Applicable to Each Anode
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
T
A
= −40°C
T
A
= −55°C
T
A
= 150°C
I
F
, FORWARD CURRENT (mA)
0.001
0.01
0.1
1.0
10
0 1020304050607
0
V
F
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (mA)
T
A
= 85°C
T
A
= 55°C
T
A
= 125°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
0.48
0.5
0.52
0.54
0.56
0.58
0.6
012345678
C
d
, DIODE CAPACITANCE (pF)
P1-P3P4-P4

BAV70LT1G

Mfr. #:
Buy BAV70LT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
Lifecycle:
New from this manufacturer.
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