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VN06SPTR-E

P1-P3P4-P6P7-P9
VN06SP
HIGH SIDE SMART POWER SOLID STATE RELAY
3EPTEMBER
TYPE V
DSS
R
DS(on)
I
n(*)
V
CC
VN06SP 60 V 0.18 Ω 1.9 A 26 V
■ MAXIMUM CONTINUOUS OUTPUT
CURRENT (#):9 A @ T
c
=85
o
C
■ 5 V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE PROTECTION
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ INDUCTIVE LOAD FAST
DEMAGNETIZATION
■ VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN06SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state, and in on state, output shorted to
V
CC
and overtemperature. Fast demagnetization
of inductive loads is archivied by negative (-18V)
load voltage at turn-off.
®
1
10
PowerSO-10™
(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the the current at T
c
= 85
o
C for a battery voltage of 13V which does not activate self
protection.
1/9
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Breakdown Voltage 60 V
I
OUT
Output Current (cont.) at T
c
= 85
o
C9A
I
R
Reverse Output Current at T
c
= 85
o
C-9A
I
IN
Input Current ±10 mA
-V
CC
Reverse Supply Voltage -4 V
I
STAT
Status Current ±10 mA
V
ESD
Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
P
tot
Power Dissipation at T
c
= 85
o
C 27 W
T
j
Junction Operating Temperature -40 to 150
o
C
T
stg
Storage Temperature -55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VN06SP
2/9
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.4
50
o
C/W
o
C/W
When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (V
CC
= 13 V; -40 ≤ T
j
≤ 125
o
C unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply Voltage 5.5 13 26 V
In(*) Nominal Current T
c
= 85
o
C V
DS(on)
≤ 0.5 (note 1) 1.9 A
R
on
On State Resistance I
OUT
= 1.9 A
I
OUT
= 1.9 A T
j
= 25
o
C
0.36
0.18
Ω
Ω
I
S
Supply Current Off State T
j
≥ 25
o
C
On State
50
15
μA
mA
V
DS(MAX)
Maximum Voltage Drop I
OUT
= 8.5 A T
c
= 85
o
C2.75V
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(^) Turn-on Delay Time Of
Output Current
I
OUT
= 1.9 A Resistive Load
Input Rise Time < 0.1 μs
20 μs
t
r
(^) Rise Time Of Output
Current
I
OUT
= 1.9 A Resistive Load
Input Rise Time < 0.1 μs
20 μs
t
d(off)
(^) Turn-off Delay Time Of
Output Current
I
OUT
= 1.9 A Resistive Load
Input Rise Time < 0.1 μs
25 μs
t
f
(^) Fall Time Of Output
Current
I
OUT
= 1.9 A Resistive Load
Input Rise Time < 0.1 μs
6 μs
(di/dt)
on
Turn-on Current Slope I
OUT
= 1.9 A
I
OUT
= I
OV
0.08 0.5
1
A/μs
A/μs
(di/dt)
off
Turn-off Current Slope I
OUT
= 1.9 A
I
OUT
= I
OV
0.2 3
3
A/μs
A/μs
V
demag
Inductive Load Clamp
Voltage
I
OUT
= 1.9 A L = 1 mH -24 -18 -14 V
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IL
Input Low Level
Voltage
0.8 V
V
IH
Input High Level
Voltage
2(•)V
V
I(hyst.)
Input Hysteresis
Voltage
0.5 V
I
IN
Input Current V
IN
= 5 V
V
IN
= 2 V
V
IN
= 0.8 V 25
250 500
250
μA
μA
μA
V
ICL
Input Clamp Voltage I
IN
= 10 mA
I
IN
= -10 mA
5.5 6
-0.7 -0.3
V
V
VN06SP
3/9
P1-P3P4-P6P7-P9

VN06SPTR-E

Mfr. #:
Buy VN06SPTR-E
Manufacturer:
STMicroelectronics
Description:
IC SSR HI SIDE SMART 60V PWRSO10
Lifecycle:
New from this manufacturer.
Delivery:
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