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TK8S06K3L(T6L1,NQ)

P1-P3P4-P6P7-P9
TK8S06K3L
1
MOSFETs Silicon N-channel MOS (U-MOS)
TK8S06K3L
TK8S06K3L
TK8S06K3L
TK8S06K3L
Start of commercial production
2011-03
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2.
2.
2.
2. Features
Features
Features
Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: R
DS(ON)
= 43 mΩ (typ.) (V
GS
= 10 V)
(3) Low leakage current: I
DSS
= 10 µA (max) (V
DS
= 60 V)
(4) Enhancement mode: V
th
= 2.0 to 3.0 V (V
DS
= 10 V, I
D
= 1 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
2014-08-04
Rev.4.0
TK8S06K3L
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(T
c
= 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 3)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
T
ch
T
stg
Rating
60
±20
8
16
25
16
8
175
-55 to 175
Unit
V
A
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
R
th(ch-c)
Max
6
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: V
DD
= 25 V, T
ch
= 25 (initial), L = 331 µH, R
G
= 1 Ω, I
AR
= 8 A
Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-08-04
Rev.4.0
TK8S06K3L
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 6 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A
Min
60
40
2.0
Typ.
51
43
Max
±10
10
3.0
80
54
Unit
µA
V
mΩ
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
See Figure 6.2.1.
Min
Typ.
400
40
80
7
14
4
18
Max
Unit
pF
ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Q
g
Q
gs
Q
gd
Test Condition
V
DD
≈ 48 V, V
GS
= 10 V, I
D
= 8 A
Min
Typ.
10
7
3
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 4)
(Note 4)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 8 A, V
GS
= 0 V
I
DR
= 8 A, V
GS
= 0 V
-dI
DR
/dt = 50 A/µs
Min
Typ.
32
18
Max
8
16
-1.2
Unit
A
V
ns
nC
Note 4: Ensure that the channel temperature does not exceed 175.
2014-08-04
Rev.4.0
P1-P3P4-P6P7-P9

TK8S06K3L(T6L1,NQ)

Mfr. #:
Buy TK8S06K3L(T6L1,NQ)
Manufacturer:
Toshiba
Description:
MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054
Lifecycle:
New from this manufacturer.
Delivery:
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