Data Sheet ADRF5021
Rev. A | Page 3 of 12
SPECIFICATIONS
V
DD
= 3.3 V to 5 V, V
SS
= −2.5 V, V
CTRL
= 0 V or 3.3 V to 5 V, V
EN
= 0 V or 3.3 V to 5 V, T
CASE
= 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 0.009 30,000 MHz
INSERTION LOSS
Between RFC and RF1/RF2 9 kHz to 10 GHz 1.1 dB
10 GHz to 20 GHz 1.4 dB
20 GHz to 30 GHz 2.0 dB
Between RFC and RF1/RF2 9 kHz to 10 GHz 65 dB
10 GHz to 20 GHz 60 dB
20 GHz to 30 GHz 60 dB
Between RF1 and RF2 9 kHz to 10 GHz 70 dB
10 GHz to 20 GHz 65 dB
20 GHz to 30 GHz 60 dB
RETURN LOSS
RFC and RF1/RF2 (On) 9 kHz to 10 GHz 23 dB
10 GHz to 20 GHz 17 dB
20 GHz to- 30 GHz 13 dB
RF1/RF2 (Off) 9 kHz to 10 GHz 30 dB
10 GHz to 20 GHz 18 dB
20 GHz to 30 GHz 8 dB
SWITCHING
Rise and Fall Time t
RISE
, t
FALL
10% to 90% of RF output 1.0 µs
On and Off Time t
ON
, t
OFF
50% V
CTL
to 90% of RF output 1.1 µs
RF Settling Time
0.1 dB 50% V
CTL
to 0.1 dB of final RF output 6.2 µs
0.05 dB 50% V
CTL
to 0.05 dB of final RF output 10 µs
INPUT LINEARITY
1
1 MHz to 30 GHz
0.1 dB P0.1dB 27 dBm
1 dB P1dB 28 dBm
Third-Order Intercept IP3 Two-tone input power = 14 dBm each tone,
Δf = 1 MHz
52 dBm
SUPPLY CURRENT VDD, VSS pins
Positive I
DD
V
DD
= 3.3 V 80 300 µA
V
DD
= 5 V 100 600 µA
I
SS
V
SS
= −2.5 V
<1
10
µA
DIGITAL CONTROL INPUTS CTRL, EN pins
Low V
INL
V
DD
= 3.3 V 0 0.8 V
V
DD
= 5 V 0.9 V
High V
INH
V
DD
= 3.3 V 1.2 3.3 V
V
DD
= 5 V 1.7 5.0 V
Current
Low and High I
INL
, I
INH
<1 µA
ADRF5021 Data Sheet
Rev. A | Page 4 of 12
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
RECOMMENDED OPERATING CONDITONS
Supply Voltage
Positive V
DD
3.0 5.4 V
Negative V
SS
−2.75 −2.25 V
V
CTL
0
V
DD
V
RF Input Power
2
P
IN
f = 1 MHz to 30 GHz, T
CASE
= 85°C
Through Path RF signal is applied to RFC or through
connected RF1/RF2
24 dBm
Terminated Path RF signal is applied to terminated RF1/RF2 24 dBm
Hot Switching RF signal is present at RFC while switching
between RF1 and RF2
18 dBm
Case Temperature T
CASE
40 +85 °C
1
For input linearity performance at frequencies less than 1 MHz, see Figure 15 to Figure 17.
2
For power derating at frequencies less than 1 MHz, see Figure 2 to Figure 4.
Data Sheet ADRF5021
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
For recommended operating conditions, see Table 1.
Table 2.
Parameter Rating
Supply Voltage
Positive −0.3 V to +5.5 V
Negative −2.75 V to +0.3 V
Digital Control Input Voltage −0.3 V to V
DD
+ 0.3 V
RF Input Power
1
(f = 1 MHz to 30 GHz,
T
CASE
= 85°C)
Through Path 27 dBm
Terminated Path 25 dBm
Hot Switching 21 dBm
Temperature
Junction (T
J
) 135°C
Storage −65°C to +150°C
Reflow (MSL3 Rating) 260°C
Junction to Case Thermal Resistance, θ
JC
Through Path 420°C/W
Terminated Path 160°C/W
ESD Sensitivity
HBM 1 kV (Class 1)
1
For power derating at frequencies less than 1 MHz, see Figure 2 to Figure 4.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one time.
POWER DERATING CURVES
4
–14
–12
–10
–8
–6
–4
–2
0
2
POWER DERATING (dB)
FREQUENCY (Hz)
10k 1M 100M 10G 30G100k 10M 1G
T
CASE
= 85°C
14580-002
Figure 2. Power Derating for Through Path vs. Frequency, T
CASE
= 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
POWER DERATING (dB)
T
CASE
= 85°C
14580-003
FREQUENCY (Hz)
10k 1M 100M 10G 30G100k 10M 1G
Figure 3. Power Derating for Terminated Path vs. Frequency, T
CASE
= 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
POWER DERATING (dB)
T
CASE
= 85°C
14580-004
FREQUENCY (Hz)
10k 1M 100M 10G 30G100k 10M 1G
Figure 4. Power Derating for Hot Switching vs. Frequency, T
CASE
= 85°C
ESD CAUTION

ADRF5021-EVALZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
ADRF5021 EVAL BOARD
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New from this manufacturer.
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