RN1961~RN1966
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1961, RN1962, RN1963
RN1964, RN1965, RN1966
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Including two devices in US6 (ultra super mini type 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2961 to RN2966
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage
RN1961 to 1966
V
CEO
50 V
RN1961 to 1964 10
Emitter-base voltage
RN1965, 1966
V
EBO
5
V
Collector current I
C
100 mA
Collector power dissipation P
C
*
200 mW
Junction temperature T
j
150 °C
Storage temperature range
RN1961 to 1966
T
stg
−55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Equivalent Circuit
(Top View)
JEDEC ―
JEITA ―
TOSHIBA 2-2J1B
Weight: 6.8 mg (typ.)
Type No. R1 (kΩ)R2 (kΩ)
RN1961 4.7 4.7
RN1962 10 10
RN1963 22 22
RN1964 47 47
RN1965 2.2 47
RN1966 4.7 47
Unit: mm
Start of commercial production
1992-01
