AP2401A/AP2411A
Document number: DS37744 Rev. 1 - 2
4 of 18
www.diodes.com
March 2015
© Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5.0V, C
IN
= 0.1µF, C
L
= 1µF, unless otherwise specified.)
Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit
V
UVLO
Input UVLO
V
IN
rising
1.6 2.0 2.4 V
∆V
UVLO
Input UVLO Hysteresis
V
IN
decreasing
- 50 - mV
I
SHDN
Input Shutdown Current Disabled, OUT = open - 0.1 1 µA
I
Q
Input Quiescent Current Enabled, OUT = open - 60 100 µA
I
LEAK
Input Leakage Current Disabled, OUT grounded - 0.1 1 µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
- 0.01 1 µA
R
DS(ON)
Switch on-Resistance
V
IN
= 5V, I
OUT
= 2.0A
T
A
= +25°C
- 70 84
mΩ
-40°C ≤ T
A
≤ +85°C
- - 105
V
IN
= 3.3V, I
OUT
= 2.0A
T
A
= +25°C
- 90 108
-40°C ≤ T
A
≤ +85°C
- - 135
I
LIMIT
Over-Load Current Limit
(Note 6)
V
IN
= 5V, V
OUT
= 4.5V -40°C ≤ T
A
≤+85°C
2.05 2.5 2.85 A
I
Trig
Current Limiting Trigger Threshold Output Current Slew rate (< 100A/s) - 2.5 - A
I
SHORT
Short-Circuit Current Limit Enabled into short circuit 1.8 2.75 3.3 A
T
SHORT
Short-Circuit Response Time
V
OUT
= 0V to I
OUT
= I
LIMIT
(OUT shorted to ground)
- 2 - µs
V
IL
EN Input Logic Low Voltage
V
IN
= 2.7V to 5.5V
- - 0.8 V
V
IH
EN Input Logic High Voltage
V
IN
= 2.7V to 5.5V
2 - - V
I
LEAK-EN
EN Input Leakage
V
IN
= 5V, V
EN
= 0V and 5.5V
- 0.01 1 µA
I
LEAK-O
Output Leakage Current
Disabled, V
OUT
= 0V
- 0.5 1 µA
T
D(ON)
Output Turn-on Delay Time
C
L
= 1µF, R
LOAD
= 5Ω
- 0.1 - ms
T
R
Output Turn-on Rise Time
C
L
= 1µF, R
LOAD
= 5Ω
- 0.6 1.5 ms
T
D(OFF)
Output Turn-off Delay Time
C
L
= 1µF, R
LOAD
= 5Ω
- 0.1 - ms
T
F
Output Turn-off Fall Time
C
L
= 1µF, R
LOAD
= 5Ω
- 0.05 0.1 ms
R
FLG
FLG Output FET on-Resistance
I
FLG
= 10mA
- 25 40 Ω
I
FOH
FLG Off Current
V
FLG
= 5V
- 0.01 1 µA
T
BLANK
FLG Blanking and Latch-off Time
Assertion or deassertion due to overcurrent and over-
temperature condition
4 7 15 ms
T
DIS
Discharge Time
C
L
= 1µF, V
IN
= 5V, disabled to V
OUT
< 0.5V
- 0.6 - ms
R
DIS
Discharge Resistance (Note 7)
V
IN
= 5V, disabled, I
OUT
= 1mA
- 105 - Ω
T
SHDN
Thermal Shutdown Threshold Enabled - 140 - °C
T
HYS
Thermal Shutdown Hysteresis - - 20 - °C
θ
JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 8) - 96 - °C/W
MSOP-8 (Note 8) - 130 - °C/W
MSOP-8EP (Note 9) - 92 - °C/W
U-DFN3030-8 (Note 9) - 84 - °C/W
U-DFN2020-6 (Note 10) - 90 - °C/W
Notes: 6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V
IN
< V
UVLO
.
The discharge function offers a resistive discharge path for the external storage capacitor for limited time.
8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
10. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground.
