CM400HU-24H Datasheet CM400HU-24H | P1-P3

Feb. 2009

1

MITSUBISHI IGBT MODULES

CM400HU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

● IC ...................................................................400A

● V

CES ....................................................... 1200V

● Insulated Type

● 1-element in a pack

● UL Recognized

Yellow Card No. E80276

File No. E80271

APPLICATION

UPS, NC machine, AC-Drive control, Servo, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

CM400HU-24H

LABEL

20.5

107

13.5

29

26

93

±0.25

(7)

18

9

12.55

62

48

±0.25

(7)

10

17.2

19.1

21.15

24.35

9.5

6.5 23 6 23

A

C

B

4

+1

–0.5

34

26

+1

–0.5

CE

E

G

CM

G

E

C

E

CIRCUIT DIAGRAM

NUTS

M8

M4

A

(6.8)

(3.2)

B

(7.2)

(4)

C

(14)

(7.2)

T

C

measured point

2-M8NUTS

2-M4NUTS

4-φ6.5

MOUNTING HOLES

Feb. 2009

2

MITSUBISHI IGBT MODULES

CM400HU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

V

CE = VCES, VGE = 0V

±V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C

V

CC = 600V, IC = 400A, VGE = 15V

V

CC = 600V, IC = 400A

V

GE = ±15V

R

G = 0.78Ω

Resistive load

I

E = 400A, VGE = 0V

I

E = 400A,

die / dt = –800A / µs

Junction to case, IGBT part

Junction to case, FWDi part

Case to heat sink, conductive grease applied (Note 6)

I

C = 40mA, VCE = 10V

I

C = 400A, VGE = 15V (Note 4)

V

CE = 10V

V

GE = 0V

Collector cutoff current

Gate-emitter

threshold voltage

Gate-leakage current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Thermal resistance (Note 5)

Contact thermal resistance

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

V

GE = 0V

V

CE = 0V

T

C = 25°C

Pulse (Note 1)

T

C = 25°C

Pulse (Note 1)

T

C = 25°C

—

Charged part to base plate, f = 60Hz, AC 1 minute

Main terminals M8 screw

Mounting M6 screw

Auxiliary terminals M4 screw

Typical value

Collector current

Emitter current

1200

±20

400

800

400

800

2100

–40 ~ +150

–40 ~ +125

2500

8.8 ~ 10.8

3.5 ~ 4.5

1.3 ~ 1.7

450

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified.)

Symbol Item Conditions UnitRatings

V

A

W

°C

Vrms

N·m

g

V

CES

VGES

IC

ICM

IE

(Note 2)

IEM

(Note 2)

PC

(Note 3)

Tj

Tstg

Viso

—

Min Typ Max

2

0.5

3.7

—

60

21

12

—

250

350

3.2

300

—

0.06

0.09

—

mA

µA

nF

nC

ns

V

ns

µC

K/W

—

2.9

2.85

—

1500

—

2.2

—

0.02

—

I

CES

IGES

Cies

Coes

Cres

QG

td (on)

tr

td (off)

tf

VEC

(Note 2)

trr

(Note 2)

Qrr

(Note 2)

Rth(j-c)Q

Rth(j-c)R

Rth(c-f)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified.)

Symbol

Item Test Conditions

V

GE(th)

VCE(sat)

Limits

Unit

6

4.5

Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

2. I

E, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.

3. Junction temperature (T

j) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. Case temperature (T

C) measured point is shown in page OUTLINE DRAWING.

6. Typical value is measured by using thermally conductive grease of

λ

= 0.9[W/(m • K)].

7.5

Feb. 2009

3

MITSUBISHI IGBT MODULES

CM400HU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

PERFORMANCE CURVES

CAPACITANCE CHARACTERISTICS

(

TYPICAL

)

CAPACITANCE C

ies

, C

oes

, C

res

(

nF

)

COLLECTOR-EMITTER VOLTAGE V

CE

(

V

)

OUTPUT CHARACTERISTICS

(

TYPICAL

)

COLLECTOR CURRENT I

C

(

A

)

TRANSFER CHARACTERISTICS

(

TYPICAL

)

COLLECTOR CURRENT I

C

(

A

)

GATE-EMITTER VOLTAGE V

GE

(

V

)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE(sat)

(

V

)

COLLECTOR CURRENT I

C

(

A

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(

TYPICAL

)

COLLECTOR-EMITTER VOLTAGE V

CE

(

V

)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE(sat)

(

V

)

GATE-EMITTER VOLTAGE V

GE

(

V

)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(

TYPICAL

)

EMITTER CURRENT I

E

(

A

)

EMITTER-COLLECTOR VOLTAGE V

EC

(

V

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(

TYPICAL

)

800

600

400

200

0

201020

468 12141618

V

CE

= 10V

T

j

= 25°C

T

j

= 125°C

5

4

3

2

1

0

200 400 600 800

T

j

= 25°C

T

j

= 125°C

V

GE

= 15V

10

2

3

5

7

10

3

2

3

5

7

1.0 1.5 2.0 2.5 3.0 3.5

2

3

T

j

= 25°C

800

600

400

200

0

10510

234 6789

V

GE

= 20

(V)

T

j

= 25°C

15

12

10

11

8

9

10

8

6

4

2

0

201020

468 12141618

9

7

5

3

1

T

j

= 25°C

I

C

= 800A

I

C

= 400A

I

C

= 160A

10

0

5

7

10

1

2

3

5

7

10

2

3

5

7

10

0

357 2

10

1

357 2

10

2

357

2

3

5

23

C

ies

V

GE

= 0V

C

oes

C

res

CM400HU-24H

CM400HU-24H

Products related to this Datasheet