IRL3705ZPBF Datasheet IRL3705ZPBF, IRL3705ZLPBF, IRL3705ZSTRLPBF | P1-P3

10/01/10

www.irf.com 1

HEXFET

®

Power MOSFET

V

DSS

= 55V

R

DS(on)

= 8.0mΩ

I

D

= 75A

This HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

S

D

G

Description

Features

l Logic Level

l Advanced Process Technology

l Ultra Low On-Resistance

l 175°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free

IRL3705ZPbF

IRL3705ZSPbF

IRL3705ZLPbF

D

2

Pak

IRL3705ZSPbF

TO-220AB

IRL3705ZPbF

TO-262

IRL3705ZLPbF

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Package Limited)

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C Power Dissipation

W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

E

AS

(Tested )

Single Pulse Avalanche Energy Tested Value

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

T

J

Operating Junction and

T

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case

––– 1.14 °C/W

R

θCS

Case-to-Sink, Flat Greased Surface

0.50 –––

R

θJA

Junction-to-Ambient

––– 62

R

θJA

Junction-to-Ambient (PCB Mount)

––– 40

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N m)

130

0.88

± 16

Max.

86

61

340

75

180

120

See Fig.12a, 12b, 15, 16

PD - 95579A

IRL3705Z/S/LPbF

2 www.irf.com

S

D

G

S

D

G

El

ectr

i

ca

l Ch

aracter

i

st

i

cs

@ T

J

=

2

5

°C (

un

l

ess

ot

h

erw

i

se

spec

ifi

e

d)

Parameter Min. T

y

p. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

55 ––– ––– V

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.055 ––– V/°C

––– 6.5 8.0

R

DS(on)

Static Drain-to-Source On-Resistance

––– ––– 11

m

Ω

––– ––– 12

V

GS(th)

Gate Threshold Voltage

1.0 ––– 3.0 V

gfs Forward Transconductance

150 ––– ––– V

I

DSS

Drain-to-Source Leakage Current

––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage

––– ––– 200 nA

Gate-to-Source Reverse Leakage

––– ––– -200

Q

g

Total Gate Charge

––– 40 60

Q

gs

Gate-to-Source Charge

––– 12 ––– nC

Q

gd

Gate-to-Drain ("Miller") Charge

––– 21 –––

t

d(on)

Turn-On Delay Time

––– 17 –––

t

r

Rise Time

––– 240 ––– ns

t

d(off)

Turn-Off Delay Time

––– 26 –––

t

f

Fall Time

––– 83 –––

L

D

Internal Drain Inductance

––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance

––– 7.5 ––– from package

and center of die contact

C

iss

Input Capacitance

––– 2880 –––

C

oss

Output Capacitance

––– 420 –––

C

rss

Reverse Transfer Capacitance

––– 220 ––– pF

C

oss

Output Capacitance

––– 1500 –––

C

oss

Output Capacitance

––– 330 –––

C

oss

eff.

Effective Output Capacitance

––– 510 –––

Source-Drain Ratin

g

s and Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– ––– 75

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 340

(

Bod

y

Diode

)

V

SD

Diode Forward Volta

g

e––––––1.3V

t

rr

Reverse Recover

y

Time –––1624ns

Q

rr

Reverse Recover

y

Char

g

e–––7.411nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 5.0V

V

DD

= 28V

I

D

= 43A

R

G

= 4.3 Ω

T

J

= 25°C, I

S

= 52A, V

GS

= 0V

T

J

= 25°C, I

F

= 43A, V

DD

= 28V

di/dt = 100A/µs

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 52A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 55V, V

GS

= 0V

V

DS

= 55V, V

GS

= 0V, T

J

= 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 5.0V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 44V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 44V

V

GS

= 5.0V, I

D

= 43A

V

DS

= 25V, I

D

= 52A

I

D

= 43A

V

DS

= 44V

V

GS

= 16V

V

GS

= -16V

V

GS

= 4.5V, I

D

= 30A

IRL3705Z/S/LPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 12V

10V

8.0V

5.0V

4.5V

3.5V

3.0V

BOTTOM 2.8V

≤

60µs PULSE WIDTH

Tj = 25°C

2.8V

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.8V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 12V

10V

8.0V

5.0V

4.5V

3.5V

3.0V

BOTTOM 2.8V

0 2 4 6 8 10 12 14 16

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 15V

≤

60µs PULSE WIDTH

0 20406080100120

I

D

,Drain-to-Source Current (A)

0

20

40

60

80

100

120

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 8.0V

IRL3705ZPBF

IRL3705ZPBF

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