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SP8M6FU6TB

P1-P3P4-P6
SP8M6
Transistors
Rev.A 1/5
Switching
SP8M6
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
SOP8
Each lead has same dimensions
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
V
DSS
Symbol
30
V
V
GSS
A
I
D
A
I
DP
A
I
S
A
I
SP
W
P
D
°C
Tch
°C
Tstg
Nchannel Pchannel
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
20
±5.0
±20
1.6
20
2
150
−55 to +150
−30
−20
±3.5
±14
−1.6
−14
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
∗1
∗1
∗2
zEquivalent circuit
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
∗2
∗1
(8) (7)
(1) (2)
∗2
∗1
(6) (5)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a) 62.5
Parameter Symbol Limits Unit
Channel to ambient
∗
∗MOUNTED ON A CERAMIC BOARD.
SP8M6
Transistors
Rev.A 2/5
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−−10 µA
Typ. Max.
Unit
Conditions
V
(BR) DSS
30 −−V
I
DSS
−−1 µA
V
GS (th)
1.0 − 2.5 V
− 36 51
R
DS (on)
− 52 73 mΩ
− 58 82
3.0 −−S
C
iss
− 230 − pF
C
oss
− 80
50
− pF
C
rss
−
6
− pF
t
d (on)
−
8
− ns
t
r
−
22
− ns
t
d (off)
−
5
− ns
t
f
−
3.9
− ns
Q
g
−
1.1
5.5 nC
Q
gs
−
1.4
− nC
Q
gd
−−nC
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
V
GS
=20V, V
DS
=0V
V
DD
15V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=5.0A, V
GS
=10V
I
D
=5.0A, V
GS
=4.5V
I
D
=5.0A, V
GS
=4V
I
D
=5.0A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
V
GS
=10V
R
L
=6.0Ω
R
G
=10Ω
V
GS
=5V
I
D
=5.0A
I
D
=2.5A, V
DD
15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗
Forward voltage
∗Pulsed
SP8M6
Transistors
Rev.A 3/5
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−−10 µA
−30 −−V
−−−1 µA
−1.0 −−2.5 V
− 65 90
− 100 140 mΩ
− 120 165
1.8 −−S
− 490 − pF
− 110
75
− pF
−
10
− pF
−
15
− ns
−
35
− ns
−
10
− ns
−
5.5
− ns
−
1.5
− nC
−
2.0
− nC
−−nC
V
GS
= −20V, V
DS
=0V
V
DD
−15V
I
D
= −1mA, V
GS
=0V
V
DS
= −30V, V
GS
=0V
V
DS
= −10V, I
D
= −1mA
I
D
= −3.5A, V
GS
= −10V
I
D
= −1.75A, V
GS
= −4.5V
I
D
= −1.75A, V
GS
= −4.0V
I
D
= −1.75A, V
DS
= −10V
V
DS
= −10V
V
GS
=0V
f=1MHz
V
GS
= −10V
R
L
=8.6Ω
R
G
=10Ω
V
GS
= −5V
I
D
= −3.5A
I
D
= −1.75A, V
DD
−15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
V
SD
−−−1.2 V I
S
= −1.0A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗
Forward voltage
∗Pulsed
P1-P3P4-P6

SP8M6FU6TB

Mfr. #:
Buy SP8M6FU6TB
Manufacturer:
ROHM Semiconductor
Description:
MOSFET SWITCHING Nch/Pch 4V
Lifecycle:
New from this manufacturer.
Delivery:
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