©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004
FMBSA56
E
C1
NC
C
C
B
SuperSOT
TM
-6 single
Mark: .2G1
pin #1
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
* Device mounted on a 1 in 2 pad of 2 oz copper.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -80 V
V
CBO
Collector-Base Voltage -80 V
V
EBO
Emitter-Base Voltage -4.0 V
I
C
Collector Current - Continuous -500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage * I
C
= -1.0mA, I
B
= 0 -80 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
= 0 -80
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= -100µA, I
C
= 0 -4.0 V
I
CEO
Collector Cut-off Current V
CE
= -60V, I
B
= 0 -0.1 µA
I
CBO
Collector Cut-off Current V
CB
= -80V, I
E
= 0 -0.1 µA
On Characteristics
h
FE
DC Current Gain I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
100
100
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= -100mA, I
B
= -10mA -0.25 V
V
BE(on)
Base-Emitter On Voltage I
C
= -100mA, V
CE
= -1.0V -1.2 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
= -10mA, V
CE
= -2.0V,
f = 100MHz
50 MHz
Symbol Parameter Max. Units
P
D
Total Device Dissipation * 700 mW
R
θJA
Thermal Resistance, Junction to Ambient, total 180 °C/W
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
• Sourced from Process 73.
FMBSA56
