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NLAST4599DFT2G

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2006
August, 2017 − Rev. 9
1 Publication Order Number:
NLAST4599/D
NLAST4599
Low Voltage Single Supply
SPDT Analog Switch
The NLAST4599 is an advanced high speed CMOS single pole −
double throw analog switch fabricated with silicon gate CMOS
technology. It achieves high speed propagation delays and low ON
resistances while maintaining low power dissipation. This switch
controls analog and digital voltages that may vary across the full
power−supply range (from V
CC
to GND).
The device has been designed so the ON resistance (R
ON
) is much
lower and more linear over input voltage than R
ON
of typical CMOS
analog switches.
The channel select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
Features
• Select Pin Compatible with TTL Levels
• Channel Select Input Over−Voltage Tolerant to 5.5 V
• Fast Switching and Propagation Speeds
• Break−Before−Make Circuitry
• Low Power Dissipation: I
CC
= 2 A (Max) at T
A
= 25°C
• Diode Protection Provided on Channel Select Input
• Improved Linearity and Lower ON Resistance over Input Voltage
• Latch−up Performance Exceeds 300 mA
• ESD Performance: HBM > 2000 V; MM > 200 V
• Chip Complexity: 38 FETs
• NLVAST Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
U U
COM
CHANNEL SELECT
2 X 0
2 X 1
NO
U
NC
NO
SELECT
6
1
2
3
5
4
COM
NC
GND
V
+
Figure 1. Pin Assignment
Figure 2. Logic Symbol
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
TSOP−6
DT SUFFIX
CASE 318G
SC−88/SC−70/SOT−363
DF SUFFIX
CASE 419B
www.onsemi.com
FUNCTION TABLE
L
H
Select
NC
NO
ON Channel
A1 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
M = Date Code*
G = Pb−Free Package
A1AYWG
G
1
A1
M G
G
1
*Date Code orientation and/or position and underbar
may vary depending upon manufacturing location.
(Note: Microdot may be in either location)
NLAST4599
www.onsemi.com
2
MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Positive DC Supply Voltage V
CC
−0.5 to +7.0 V
Analog Input Voltage (V
NO
or V
COM
) V
IS
−0.5 ≤ V
IS
≤ V
CC
)0.5 V
Digital Select Input Voltage V
IN
−0.5 ≤ V
I
≤ + 7.0 V
DC Current, Into or Out of Any Pin I
IK
$50 mA
Power Dissipation in Still Air SC−88
TSOP6
P
D
200
200
mW
Storage Temperature Range T
STG
−65 to +150 °C
Lead Temperature, 1mm from Case for 10 seconds T
L
260 °C
Junction Temperature Under Bias T
J
150 °C
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
ESD
2000
200
N/A
V
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) I
LATCHUP
$300 mA
Thermal Resistance SC−88
TSOP6
JA
333
333
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Characteristics Symbol Min Max Unit
DC Supply Voltage V
CC
2.0 5.5 V
Digital Select Input Voltage V
IN
GND 5.5 V
Analog Input Voltage (NC, NO, COM) V
IS
GND V
CC
V
Operating Temperature Range T
A
−55 +125 °C
Input Rise or Fall Time
SELECT V
CC
= 3.3 V + 0.3 V
V
CC
= 5.0 V + 0.5 V
t
r
, t
f
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature 5C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
T
J
= 130°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
T
J
= 120°C
NLAST4599
www.onsemi.com
3
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Parameter
Condition Symbol V
CC
Guaranteed Limit
Unit
−55 to 255C <855C <1255C
Minimum High−Level Input
Voltage, Select Input
V
IH
3.0
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
V
Maximum Low−Level Input
Voltage, Select Input
V
IL
3.0
4.5
5.5
0.5
0.8
0.8
0.5
0.8
0.8
0.5
0.8
0.8
V
Maximum Input Leakage
Current, Select Input
V
IN
= 5.5 V or GND I
IN
5.5 +0.1 +1.0 +1.0
A
Power Off Leakage Current V
IN
= 5.5 V or GND I
OFF
0 +10 +10 +10
A
Maximum Quiescent Supply
Current
Select and V
IS
= V
CC
or GND I
CC
5.5 1.0 1.0 2.0
A
DC ELECTRICAL CHARACTERISTICS − Analog Section
Parameter Condition Symbol V
CC
Guaranteed Limit
Unit
−55 to 255C <855C <1255C
Maximum “ON” Resistance
(Figures 17 − 23)
V
IN
= V
IL
or V
IH
V
IS
= GND to V
CC
I
IN
I < 10.0 mA
R
ON
2.5
3.0
4.5
5.5
85
45
30
25
95
50
35
30
105
55
40
35
ON Resistance Flatness
(Figures 17 − 23)
V
IN
= V
IL
or V
IH
I
IN
I < 10.0 mA
V
IS
= 1V, 2V, 3.5V
R
FLAT
(ON)
4.5 4 4 5
ON Resistance Match
Between Channels
V
IN
= V
IL
or V
IH
I
IN
I < 10.0 mA
V
NO
or V
NC
= 3.5 V
R
ON
(ON)
4.5 2 2 3
NO or NC Off Leakage
Current (Figure 9)
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 1.0 V
COM
4.5 V
I
NC(OFF)
I
NO(OFF)
5.5 1 10 100 nA
COM ON Leakage
Current (Figure 9)
V
IN
= V
IL
or V
IH
V
NO
1.0 V or 4.5 V with V
NC
floating
or
V
NO
1.0 V or 4.5 V with V
NO
floating
V
COM
= 1.0 V or 4.5 V
I
COM(ON)
5.5 1 10 100 nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P12

NLAST4599DFT2G

Mfr. #:
Buy NLAST4599DFT2G
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs Single SPDT Sw w/TTL Level -55 to 125 C
Lifecycle:
New from this manufacturer.
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