1999 Apr 12 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − − 15 nA
I
E
= 0; V
CB
= 30 V; T
j
= 150 °C − − 5 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − − 100 nA
h
FE
DC current gain I
C
= 2 mA; V
CE
= 5 V; see Figs 2 and 3
BC849BW; BC850BW 200 − 450
BC849CW; BC850CW 420 − 800
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − − 250 mV
I
C
= 100 mA; I
B
= 5 mA; note 1 − − 600 mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 580 − 700 mV
I
C
= 10 mA; V
CE
= 5 V − − 770 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − − 3 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
F noise figure I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 10 Hz to 15.7 kHz
− − 4 dB
I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− − 4 dB