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BUK9660-100A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK9660-100A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 16 February 201
1
6 of 13
NXP Semiconductors
BUK9660-100A
N-channel T
renchMOS logic level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Forwar
d transconductanc
e as a function of
drain current; typi
cal values
03nc73
0
20
40
60
80
0246
8
1
0
V
DS
(V)
I
D
(A)
3
10
8
6
V
GS
(V) =
4
5
2.2
03nc72
40
50
60
70
80
90
100
2468
1
0
V
GS
(V)
R
DSon
(m
Ω
)
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
03nc70
0
10
20
30
40
02
0
4
0
6
0
I
D
(A)
g
fs
(S)
BUK9660-100A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 16 February 201
1
7 of 13
NXP Semiconductors
BUK9660-100A
N-channel T
renchMOS logic level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11.
Gate-source
threshold
voltage as a function
of
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03nc71
0
10
20
30
40
50
0123
4
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
03nc69
0
1
2
3
4
5
01
0
2
0
3
0
4
0
Q
G
(nC)
V
GS
(V)
V
DD
= 80 V
V
DD
= 14 V
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03nc74
0
20
40
60
80
100
120
140
0
2
04
06
08
0
I
D
(A)
R
DSon
(m
Ω
)
3
3.2
3.4
3.6
45
3.8
V
GS
(V) =
BUK9660-100A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 16 February 201
1
8 of 13
NXP Semiconductors
BUK9660-100A
N-channel T
renchMOS logic level FET
Fig 13.
Normalized drain-source on-state resistance
factor as a
function of junctio
n temperature
Fig
14.
Input, outp
ut and reverse trans
fer capacitances
as a function of d
rain-source voltage; ty
pical
values
Fig 15.
Reverse diode current
as a function of reverse diod
e voltage; typical valu
e
03aa29
0
1
2
3
-
60
0
60
120
180
T
j
(
°
C)
a
03nc75
0
500
1000
1500
2000
2500
3000
3500
0.01
0.1
1
10
100
V
DS
(V)
C (pF)
C
iss
C
oss
C
rss
03nc68
0
10
20
30
40
50
60
70
0.0
0.5
1.0
1.5
V
SD
(V)
I
S
(A)
T
j
= 175
°
C
T
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK9660-100A,118
Mfr. #:
Buy BUK9660-100A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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