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BU508AW

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics BU508AW
4/11
2 Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
=0)
V
CE
= 1500V
V
CE
= 1500V; T
C
= 125°C
0.2
2
mA
mA
I
EBO
Emitter cut-off current
(I
C
=0)
V
EB
= 9V
1mA
V
CEO(sus)
(1)
Collector-emitter
sustaining voltage
(I
C
=0)
I
C
= 100mA
700 V
V
CE(sat)
(1)
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
Collector-emitter
saturation voltage
I
C
= 4.5A I
B
= 1.6A
1V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 4.5A I
B
= 2A
1.1 V
h
FE
(1)
DC current gain
I
C
= 0.1A V
CE
= 5V
I
C
= 4.5A V
CE
= 5V
10
5
30
t
s
t
f
Inductive load
Storage time
Fall time
I
C
= 4.5A I
B(on)
=
0.5A
V
BE(off)
= -2.7V f
h
= 16KHz
L
BB(off)
= 4.5µH
2.5
0.2
µs
µs
BU508AW Electrical characteristics
5/11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain Figure 5. DC current gain
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
Electrical characteristics BU508AW
6/11
Figure 8. Output characteristics
P1-P3P4-P6P7-P9P10-P11

BU508AW

Mfr. #:
Buy BU508AW
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT Hi Vltg NPN Pwr transistor
Lifecycle:
New from this manufacturer.
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