HCF4070M013TR

Device overview HCF4070
4/12 DocID002061 Rev 5
Figure 3. Logic diagram
Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
All voltage values are relative to the V
SS
pin voltage.
Table 3. Truth table
Inputs Output
A, C, E, G B, D, F, H J, K, L, M
LL L
LH H
HL H
HH L
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
DD
Supply voltage -0.5 to +22 V
V
I
DC input voltage -0.5 to V
DD
+ 0.5 V
I
I
DC input current 10 mA
P
D
Power dissipation per package 200 mW
Power dissipation per output transistor 100 mW
T
op
Operating temperature -55 to +125 °C
T
stg
Storage temperature -65 to +150 °C
Table 5. Recommended operating conditions
Symbol Parameter Value Unit
V
DD
Supply voltage 3 to 20 V
V
I
Input voltage 0 to V
DD
V
T
op
Operating temperature
SO14 -55 to 125 °C
SO14 (automotive grade) -40 to 125 °C
DocID002061 Rev 5 5/12
HCF4070 Device overview
12
The noise margin for both the "1" and "0" level is: 1 V min. with V
DD
= 5 V, 2 V min. with
V
DD
= 10 V, 2.5 V min. with V
DD
= 15 V.
Table 6. DC specifications
Sym. Parameter
Test condition Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(A)
V
DD
(V)
T
A
= 25°C -40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
I
L
Quiescent current
0/5 5 0.02 1 30 30
A
0/10 10 0.02 2 60 60
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
V
OH
High-level output
voltage
0/5 <1 5 4.95 4.95 4.95
V0/10 <1 10 9.95 9.95 9.95
0/15 <1 15 14.95 14.95 14.95
V
OL
Low-level output
voltage
5/0 <1 5 0.05 0.05 0.05
V10/0 <1 10 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
V
IH
High-level input
voltage
0.5/4.5 <1 5 3.5 3.5 3.5
V1/9 <1 10 7 7 7
1.5/13.5 <1 15 11 11 11
V
IL
Low-level input
voltage
4.5/0.5 <1 5 1.5 1.5 1.5
V9/1 <1 10 3 3 3
13.5/1.5 <1 15 4 4 4
I
OH
Output drive current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
mA
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output sink current
0/5 0.4 <1 5 0.44 1 0.36 0.36
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
I
I
Input leakage current 0/18 Any Input 18 10
-5
0.1 1 1 A
C
I
Input capacitance Any Input 5 7.5 pF
Device overview HCF4070
6/12 DocID002061 Rev 5
Figure 4. Test circuit
1. C
L
= 50 pF or equivalent (includes jig and probe capacitance)
2. R
L
= 200 k
3. R
T
= Z
OUT
of pulse generator (typically 50 )
Table 7. Dynamic electrical characteristics
(T
amb
= 25 °C, C
L
= 50 pF, R
L
= 200 kΩ, t
r
= t
f
= 20 ns)
Symbol Parameter
Test condition Value
(1)
1. Typical temperature coefficient for all V
DD
values is 0.3%/°C.
Unit
V
DD
(V) Min. Typ. Max.
t
PLH
t
PHL
Propagation delay time
5 140 280
ns10 70 130
15 50 100
t
TLH
t
THL
Output transition time
5 100 200
ns10 50 100
15 40 80

HCF4070M013TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Logic Gates Quad Exclusive OR
Lifecycle:
New from this manufacturer.
Delivery:
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