BC858B-HF

General Purpose Transistor
RoHS Device
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
BC856-HF Thru. BC858-HF Series (PNP)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continuous
Storage temperature range
Unit
Symbol
Parameter Value
VCBO
VCEO
VEBO
IC
PC
-80
-50
-30
-65
-45
-30
-5
250
V
V
V
A
mW
Junction temperature range
TJ
-65 to +150
°C
Collector dissipation
BC856
BC858
BC857
BC856
BC858
BC857
-0.1
TSTG
-65 to +150
°C
Features
- Power dissipation
PCM: 0.25W (@TA=25°C)
- Low current.(max. 100mA)
- Collector-base voltage
VCBO: BC856 = -80V
BC857 = -50V
BC858 = -30V
- Operating and storage junction temperature
range: TJ, TSTG= -65 to +150°C
- Ideally suited for automatic insertion
Maximum Ratings (at Ta=25°C unless otherwise noted)
Comchip Technology CO., LTD.
Page 1
REV:A
QW-JTR16
Circuit diagram
3
1 2
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
Company reserves the right to improve product design , functions and reliability without notice.
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.122(3.10)
0.106(2.70)
0.059(1.50)
0.043(1.10)
0.079(2.00)
0.071(1.80)
0.039(1.00)
Typ.
0.016(0.40)
Typ.
0.004(0.10)
Typ.
0.102(2.60)
0.087(2.20)
Halogen Free
0.004(0.10)
0.001(0.02)
Electrical Characteristics (TA= 25°C unless otherwise specified)
Comchip Technology CO., LTD.
Page 2
REV:A
General Purpose Transistor
QW-JTR16
Company reserves the right to improve product design , functions and reliability without notice.
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base break voltage down
Collector cut-off current
Collector-Emitter saturation voltage
Unit
Symbol
Parameter
MIN
V(BR)CBO
V CEO(BR)
V(BR)EBO
ICBO
VCE(sat)
-80
-50
-30
-65
-45
-30
-5
-15
V
V
V
nA
Test Conditions
IC = -10μA , IE=0
IC = -10mA , IB=0
IE = -1μA , IC=0
VCB= -30V , IE=0
MAX
DC current gain
hFE
BC856A ,857A ,858A
BC856B ,857B ,858B
BC857C ,858C
VCE = -5V , IC= -2.2mA
250
475
800
-0.65
Base-Emitter saturation voltage
VBE(sat)
V
Transition frequency
fT
MHZ
100
VCE=-5V, IC=-10mA
f=100MHZ
BC856
BC858
BC857
BC856
BC858
BC857
125
220
420
V
IC =-100mA , IB=-5mA
IC =-10mA , IB=-0.5mA
-0.3
IC =-10mA , IB=-0.5mA
IC =-100mA , IB=-5mA
TYP
-1
-0.7
-0.85
Base-Emitter voltage
VBE(on)
V
IC =-2mA , VCE=-5V
IC =-10mA , =-5VVCE
-0.65
-0.82
-0.6 -0.75
CC
4.5
Collector capacitance
pF
F
10
Transition frequency
dB
IC=-200uA, VCE=-5V
RS=2kΩ,f=1kHz,
B=200Hz
2
VCB =-10V , IE=Ie=0
f=1MHZ
Emitter cut-off current
IEBO
-0.1
µA
VEB= -5V , IC=0
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)
VBE, (mV)
-400
-1200
Comchip Technology CO., LTD.
Page 3
REV:A
-200
-800
General Purpose Transistor
QW-JTR16
IC, (mA)
-600
-1000
0
Tam
b=
-5
C
T
a
m
b
=
2
5
°C
T
a
m
b
=
1
5
0
°
C
BC857A;VCE= -5V
Fig.2 - Base-Emitter voltage as a function
of collector current; typical values
VBEsat, (mV)
-400
-1200
-10
-200
-1
-800
IC, (mA)
-600
-1000
0
-10
-1
-10
2
-10
3
BC857A;IC/IB= 20
T
am
b=
-5
C
T
am
b=
25
°C
T
am
b=15
C
Fig.4 - Base-Emitter saturation voltage
as a function of collector current;
typical values
hFE
200
500
100
400
IC, (mA)
300
0
Fig.1 - DC current gain as A function fo
collector current; typical values.
BC857A;VCE= -5V
T
amb=150°C
T
amb=25°C
T
amb=-55°C
VCEsat, (mV)
IC, (mA)
Fig.3 - Collector-Emitter saturation voltage
as a function of collector current;
typical values.
-10
4
-10
3
-10
2
-10
Tamb=25°C
T
amb=-55°C
T
amb=150°C
BC857A;IC/IB= 20
VBE, (mV)
-400
-1200
-10
-200
-1
-800
IC, (mA)
-600
-1000
0
-10
-2
-10
-1
-10
2
-10
3
T
am
b=
-5
C
T
a
m
b
=
2
5
°C
T
a
m
b
=
1
50
°
C
BC857B;VCE=-5V
Fig. 6 - Base-Emitter voltage as a function
of collector current; typical values.
hFE
400
1000
200
800
IC, (mA)
600
0
Fig.5 - DC current gain as a function fo
collector current; typical values.
BC857B;VCE= -5V
T
amb=150°C
T
amb=25°C
T
amb=-55°C
Company reserves the right to improve product design , functions and reliability without notice.
-10
-1
-10
-2
-10
-1
-10
2
-10
3
-10
-1
-10
-2
-10
2
-10
3
-10
-1
-10
-1
-10
-2
-10
2
-10
3
-10
-1
-10
-1
-10
-1
-10
2
-10
3

BC858B-HF

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Bipolar Transistors - BJT TRANSISTOR PNP -30V -0.1A HALOGEN-FREE
Lifecycle:
New from this manufacturer.
Delivery:
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