DocID13566 Rev 3 5/11
T1635H, T1650H Characteristics
11
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse
Figure 8. Relative variation of I
GT
,I
H
, I
L
vs
junction temperature(typical values)
100
1000
10000
0.01 0.10 1.00 10.00
I
TSM
(A), I²t (A²s)
Tj initial=25 °C
dI/dt limitation: 50 A/µs
I
TSM
I²t
t
P
(ms)
width t < 10 ms and corresponding value of I t
p
2
0.0
0.5
1.0
1.5
2.0
2.5
-40 -20 0 20 40 60 80 100 120 140 160
I
GT
,I
H
,I
L
[T
j
]/I
GT
,I
H
,I
L
[T
j
=25°C]
I
GT
I
H
& I
L
T
j
(°C)
Figure 9. Relative variation of critical rate of
decrease of main current (dI/dt)c versus
reapplied (dV/dt)c
Figure 10. Relative variation of critical rate of
decrease of main current versus junction
temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1.0 10.0 100.0
(dI/dt)
c
[(dV/dt)
c
] / Specified (dI/dt)
c
(dV/dt)
C
(V/µs)
typical values
0
1
2
3
4
5
6
7
8
25 50 75 100 125 150
(dI/dt)
c
[T
j
] / (dI/dt)
c
[T
j
=150°C]
T
j
(°C)
Figure 11. Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
Figure 12. Variation of thermal resistance
junction to ambient versus copper surface
under tab
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
50 75 100 125 150
I
DRM
/I
RRM
(µA)
V
DRM
=V
RRM
=400 VV
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=600 VV
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=200 VV
DRM
=V
RRM
=200 V
T
j
(°C)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
R
th(j-a)
(°C/W)
D²PAK
S
CU
(cm²)
Epoxy printed circuit board FR4,
copper thickness = 35 µm
