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HUF75309P3

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Rev. B
HUF75309P3, HUF75309D3, HUF75309D3S
19A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Features
• 19A, 55V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75309P3 TO-220AB 75309P
HUF75309D3 TO-251AA 75309D
HUF75309D3S TO-252AA 75309D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST.
D
G
S
JEDEC STYLE TO-220AB JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . V
DGR
55 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
19
Figure 4
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55
0.37
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 55 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 50V, V
GS
= 0V - - 1 µA
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C--250µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Drain to Source On Resistance r
DS(ON)
I
D
= 19A, V
GS
= 10V (Figure 9) - 0 .060 0.070 Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
θJC
(Figure 3) - - 2.7
o
C/W
Thermal Resistance Junction to Ambient R
θJA
TO-220 - - 62
o
C/W
TO-251, TO-252 - - 100
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
ON
V
DD
= 30V, I
D
≅ 19A,
R
L
= 1.58Ω, V
GS
= 10V,
R
GS
= 27Ω
- - 70 ns
Turn-On Delay Time t
d(ON)
-7-ns
Rise Time t
r
-39- ns
Turn-Off Delay Time t
d(OFF)
-24- ns
Fall Time t
f
-30- ns
Turn-Off Time t
OFF
- - 80 ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 30V,
I
D
≅ 19A,
R
L
= 1.58Ω
I
g(REF)
= 1.0mA
(Figure13)
-2024nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - 11 13.5 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 2V - 0.68 0.85 nC
Gate to Source Gate Charge Q
gs
-1.8- nC
Reverse Transfer Capacitance Q
gd
-5-nC
HUF75309P3, HUF75309D3, HUF75309D3S
©2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
- 350 - pF
Output Capacitance C
OSS
- 150 - pF
Reverse Transfer Capacitance C
RSS
-39-pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 19A - - 1.25 V
Reverse Recovery Time t
rr
I
SD
= 19A, dI
SD
/dt = 100A/µs--50ns
Reverse Recovered Charge Q
RR
I
SD
= 19A, dI
SD
/dt = 100A/µs--70nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125
17
5
5
10
15
20
50 75 100 125 150 17
5
0
25
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
0.01
2
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
HUF75309P3, HUF75309D3, HUF75309D3S
P1-P3P4-P6P7-P9P10-P10

HUF75309P3

Mfr. #:
Buy HUF75309P3
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 19a 55V N-Channel UltraFET
Lifecycle:
New from this manufacturer.
Delivery:
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